P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9567GM
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast...
Description
AP9567GM
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic
D D D D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
G
-40V 50mΩ -6A
ID
SO-8
S S
S
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating -40 ±25 -6 -4.8 -30 2.5 0.02 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 50
Unit ℃/W
Data and specifications subject to change without notice
201223041
AP9567GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=-250uA
2
Min. -40 -1 -
Typ. -0.03 9 11 3 5 10 5 30 6 880 135 110 5
Max. Units 50 80 -3 -1 -25 ±100 18 1400 8 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ...
Similar Datasheet