B1258

(3 k Ω)(1 0 0 Ω) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1258 –100 –100 –6 –6(Pulse–10) –1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB1258 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–100V VEB=–6V IC=–10mA VCE=–2V, IC=–3A IC=–3A, IB=–6mA IC=–3A, IB=–6mA VCE=–12V, IE=0.2A VCB=–10V, f=1MHz 2SB1258 –10max –10max –100min 1000min –1.5max –2max 100typ 100typ V V MHz pF 13.0min B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785) Application : Driver for Solenoid, Relay and Motor and General Purpose (Ta=25°C) Unit External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 µA V 16.9±0.3 8.4±0.2 µA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) –30 RL (Ω) 10 IC (A) –3 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –6 IB2 (mA) 6 ton (µs) 0.6typ tstg (µs) 1.6typ tf (µs) 0.5typ 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) –6 A 3. – 4 2. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –3 I C – V BE Temperature Characteristics (Typical) –6 (V C E =–4V) 4m mA –2.0 mA –1 .8 m A IB –5 Collector Current I C (A) =– –5 Collector Current I C (A) –1.2 mA –4 –4 –0.9mA –3 –2 mp) –3 ) Temp (Cas –2 125˚C –...