2SC2312

G H FEATURES HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2312 –T– SEATING PLANE 4 DESCRIPTION Designed for RF power amplifier on HF band mobile radio applications. T S C B F Q 1 2 3 A H U Z L R J STYLE 1: PIN 1. 2. 3. 4. K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min. at 18.5 W/27 MHz Emitter ballasted construction V BASE COLLECTOR EMITTER COLLECTOR G N D DIMENSIONS UNIT mm inches A 15.75 14.48 0.620 0.570 B 10.28 9.66 0.405 0.380 C 4.82 4.07 0.19 0.16 D 0.88 0.64 0.035 0.025 F 3.73 3.61 0.147 0.142 G 2.66 2.42 0.105 0.095 H 3.93 2.8 0.155 0.110 J 0.64 0.46 0.025 0.018 K 14.27 12.70 0.562 0.500 L 1.52 1.15 0.060 0.045 N 5.33 4.83 0.210 0.190 Q 3.04 2.54 0.12 0.10 R 2.79 2.04 0.11 0.08 S 1.39 1.15 0.055 0.045 T 6.47 5.97 0.255 0.235 U 1.27 0.00 0.05 0.00 V -1.15 -0.045 Z 2.04 -0.08 -- MAXIMUM RATINGS CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector Current Emitter-Base Voltage Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VCEO IC VEBO PDISS TJ TSTG RATINGS 60 60 20 6 5 25 -65 to 175 -65 to 175 UNITS V V V A V W °C °C ELECTRICAL CHARACTERISTICS CHARACTERISTICS Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain Power Gain Collector Efficiency SYMBOL V(BR)CEO V(BR)CES V(BR)EBO ICBO hFE GP ηC TEST CONDITION...