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CNY171M Dataheets PDF



Part Number CNY171M
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Phototransistor Optocouplers
Datasheet CNY171M DatasheetCNY171M Datasheet (PDF)

CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers November 2009 CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M, MOC8107M Phototransistor Optocouplers Features ■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. ■ ■ ■ ■ – Add option V (e.g., CNY17F2VM) – File #102497 Current transfer ratio .

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CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers November 2009 CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M, MOC8107M Phototransistor Optocouplers Features ■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. ■ ■ ■ ■ – Add option V (e.g., CNY17F2VM) – File #102497 Current transfer ratio in select groups High BVCEO: 70V minimum (CNY17XM, CNY17FXM, MOC810XM) Closely matched current transfer ratio (CTR) minimizes unit-to-unit variation. Very low coupled capacitance along with no chip to pin 6 base connection for minimum noise susceptability (CNY17FXM, MOC810XM) Package Outlines Applications ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs ■ Appliance sensor systems ■ Industrial controls Schematics ANODE 1 6 NC ANODE 1 6 BASE CATHODE 2 5 COLLECTOR CATHODE 2 5 COLLECTOR NC 3 4 EMITTER NC 3 4 EMITTER CNY17F1M/2M/3M/4M MOC8106M/7M CNY171M/2M/3M/4M ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 www.fairchildsemi.com CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol TOTAL DEVICE TSTG TOPR TJ TSOL PD EMITTER IF VR IF (pk) PD DETECTOR IC VCEO VECO PD Storage Temperature Operating Temperature Junction Temperature Lead Solder Temperature Parameters Value -40 to +150 -40 to +100 -40 to +125 260 for 10 sec 250 2.94 60 6 1.5 120 1.41 50 70 7 150 1.76 Units °C °C ºC °C mW mW/°C mA V A mW mW/°C mA V V mW mW/°C Total Device Power Dissipation @ 25°C (LED plus detector) Derate Linearly From 25°C Continuous Forward Current Reverse Voltage Forward Current – Peak (1µs pulse, 300pps) LED Power Dissipation 25°C Ambient Derate Linearly From 25°C Continuous Collector Current Collector-Emitter Voltage Emitter Collector Voltage Detector Power Dissipation @ 25°C Derate Linearly from 25°C ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 www.fairchildsemi.com 2 CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers Electrical Characteristics (TA = 25°C Unless otherwise specified.)(1) Individual Component Characteristics Symbol Parameters Test Conditions EMITTER VF Input Forward Voltage IF = 60mA IF = 10mA CJ IR Capacitance Reverse Leakage Current Breakdown Voltage Collector to Emitter Collector to Base Emitter to Collector Leakage Current Collector to Emitter Collector to Base Capacitance Collector to Emitter Collector to Base Emitter to Base VF = 0 V, f = 1.0MHz VR = 6V CNY17XM, CNY17FXM MOC810XM All All 1.0 1.0 1.35 1.15 18 0.001 10 1.65 1.50 pF µA V Device Min. Typ. Max. Units DETECTOR BVCEO BVCBO BVECO ICEO ICBO CCE CCB CEB IC = 1.0mA, IF = 0 IC = 10µA, IF = 0 IE = 100µA, IF = 0 VCE = 10 V, IF = 0 VCB = 10 V, IF = 0 VCE = 0, f = 1MHz VCB = 0, f = 1MHz VEB = 0, f = 1MHz All CNY171M/2M/3M/4M All All CNY171M/2M/3M/4M All CNY171M/2M/3M/4M CNY171M/2M/3M/4M 8 20 10 70 70 7 100 120 10 1 50 20 nA nA pF pF pF V Isolation Characteristics Symbol VISO RISO CISO Characteristic Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance Test Conditions f = 60 Hz, t = 1 sec., II-O ≤ 2µA(4) VI-O = 500 VDC(4) VI-O = Ø, f = 1MHz(4) Min. 7500 1011 Typ.* Max. Units Vac(pk) Ω 0.2 pF Transfer Characteristics (TA = 25°C Unless otherwise specified.)(3) Symbol COUPLED (CTR)(2) Output Collector Current MOC8106M MOC8107M CNY17F1M CNY17F2M CNY17F3M CNY17F4M CNY171M CNY172M CNY173M CNY174M VCE(sat) Collector-Emitter CNY17XM/FXM Saturation Voltage MOC8106M/7M IC = 2.5mA, IF = 10mA IC = 500µA, IF = 5.0mA IF = 10mA, VCE = 5V IF = 10mA, VCE = 10V 50 150 % DC Characteristics Test Conditions Min. Typ.* Max. Units 100 40 63 100 160 40 63 100 160 300 80 125 200 320 80 125 200 320 0.4 V *All typicals at TA = 25°C ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 www.fairchildsemi.com 3 CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers Electrical Characteristics Symbol ton toff td tr ts tf (Continued) (TA = 25°C Unless otherwise specified.)(1) Transfer Characteristics (Continued)(3) AC Characteristics(4) Turn-On Time Turn-Off Time Delay Time Rise Time Storage Time Fall Time All Devices All Devices CNY17XM/XFM All Devices CNY17XM/FXM CNY17XM/FXM All Devices CNY17XM/FXM SATURATED SWITCHING TIMES ton Turn-on Time CNY171M/F1M CNY172M/3M/4M CNY17F2M/F3M/F4M tr Rise Time CNY171M/F1M CNY172M/3M/4M CNY17F2M/F3M/F4M td Delay Time CNY171M/F1M CNY172M/3M/4M.


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