CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
November 2009
CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M,...
CNY17XM, CNY17FXM, MOC810XM — Photo
transistor Optocouplers
November 2009
CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M, MOC8107M Photo
transistor Optocouplers
Features
■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized
Description
The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an
NPN photo
transistor in a dual in-line package.
■ ■ ■ ■
– Add option V (e.g., CNY17F2VM) – File #102497 Current transfer ratio in select groups High BVCEO: 70V minimum (CNY17XM, CNY17FXM, MOC810XM) Closely matched current transfer ratio (CTR) minimizes unit-to-unit variation. Very low coupled capacitance along with no chip to pin 6 base connection for minimum noise susceptability (CNY17FXM, MOC810XM)
Package Outlines
Applications
■ Power supply
regulators ■ Digital logic inputs ■ Microprocessor inputs ■ Appliance sensor systems ■ Industrial controls
Schematics
ANODE 1
6 NC
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
CATHODE 2
5 COLLECTOR
NC 3
4 EMITTER
NC 3
4 EMITTER
CNY17F1M/2M/3M/4M MOC8106M/7M
CNY171M/2M/3M/4M
©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1
www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC810XM — Photo
transistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not...