1. Scope MN130S The present specifications shall apply to Sanken silicon power transistor type MN130S.
2.
( 25 ) Absol...
1. Scope MN130S The present specifications shall apply to Sanken silicon power
transistor type MN130S.
2.
( 25 ) Absolute Maximum Ratings (Ta=25 )
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg
Rating 200 140 6 10 4 130 (Tc=25 ) 150 -55 150
Unit V V V A A W
3.
( 25 ) Electrical Characteristics (Ta=25 ) Limits TYP MAX 10 10 140 70 180 0.5 20 250 V MHz pF
Characteristic Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Voltage DC Current Transfer Ratio Collector-Emitter Saturation Voltage Cut-off Frequency Output Capacitance hFE hFE rank
Symbol ICBO IEBO VCEO hFE VCE (sat) fT Cob
Test Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=-0.5A VCB=10V, IE=0A f=1MHz
MIN
Unit A A V
: 70 140 (P), 90 180 (Y)
050812
SSE-23638
1 6
61426-01
4. Plastic molded
transistor accessories
: Material : MICA : 0.06t Thickness
0.045 0.005
Dimensions in mm
4A-E01560
050812
SSE-23638
2 6
61426-01
5
( No.100) Packing information (Lead Forming No.100) 5-1 Packing type, physical dimensions and material
3.2
a. MN130S b. c.
a. Type Number
(1) Base (2) Collector (3) Emitter (1) < >
(2) (3)
b. Lot Number 1st letter The last digit of year 2nd letter Month 1 9 : 10 :O 11 :N 12 :D (1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec.) c. hFE hFE rank
...
