MX29F100B

MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current(5MHz) - 1uA typical standby current Command register architecture - Byte/ Word Programming (7us/ 12us typical) - Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x1) Auto Erase (chip) and Auto Program - Automatically erase any combination of sectors or with Erase Suspend capability. - Automatically program and verify data at specified address Status Reply - Data polling & Toggle bit for detection of program and erase cycle completion. Compatibility with JEDEC standard - Pinout and software compatible with single-power supply Flash - Superior inadvertent write protection Sector protection - Hardware method to disable any combination of sectors from program or erase operations - Sector protect/unprotect for 5V only system or 5V/ 12V system 100,000 minimum erase/program cycles Latch-up protected to 100mA from -1 to VCC+1V Boot Code Sector Architecture - T = Top Boot Sector - B = Bottom Boot Sector Low VCC write inhibit is equal to or less than 3.2V Package type: - 44-pin SOP - 48-pin TSOP Ready/Busy pin(RY/BY) - Provides a hardware method or detecting program or erase cycle completion Erase suspend/ Erase Resume - Suspend an erase operation to read data from, or program data to a sector that is not being erased, then resume the erase operation. Hardw...