MX29F1610A

PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns Sector erase architecture - 16 equal sectors of 128k bytes each - Sector erase time: 1.3 s typical Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip with Erase Suspend capability - Automatically programs and verifies data at specified addresses Status Register feature for detection of program or erase cycle completion Low VCC write inhibit is equal to or less than 3.2V Software and hardware data protection Page program operation - Internal address and data latches for 128 bytes/64 words per page - Page programming time: 0.9ms typical - Byte programming time: 7us in average Low power dissipation - 30mA typical active current - 1uA typical standby current CMOS and TTL compatible inputs and outputs Sector Protection - Hardware method that can protect any combination of sectors from write or erase operations. Deep Power-Down Input - 1uA ICC typical Industry standard surface mount packaging - 48 lead TSOP, TYPE I - 44 lead SOP GENERAL DESCRIPTION The MX29F1610A is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29F1610A includes 16-128KB(131,072) blocks or 1664KW(65,536) blocks. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile ra...