MX29F1611

INDEX PRELIMINARY MX29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES 5V ± 5% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns Fast pagemode access time: 50/60/70ns Page access depth: 16 bytes/8 words, page address A0, A1, A2 Sector erase architecture - 16 equal sectors of 128k bytes each - Sector erase time: 150ms typical Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip with Erase Suspend capability - Automatically programs and verifies data at specified addresses Status Register feature for detection of program or erase cycle completion Low VCC write inhibit is equal to or less than 3.2V Software and hardware data protection Page program operation - Internal address and data latches for 128 bytes/64 words per page - Page programming time: 5ms typical - Byte programming time: 39us in average Low power dissipation - 80mA active current - 100uA standby current CMOS inputs and outputs Two independently Protected sectors Industry standard surface mount packaging - 44 lead SOP GENERAL DESCRIPTION The MX29F1611 is a 16-mega bit Pagemode Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29F1611 includes 16-128KB(131,072 Bytes) blocks or 16-64KW(65,536 Words)blocks. MXIC's Flash memories offer the most cost-effective and reliable read/ write non-volatile random access memory and fast page ...