MX29F1615

PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles Fast access time: 90/100/120ns Auto Erase and Auto Program Algorithms - Automatically erases the whole chip - Automatically programs and verifies data at specified addresses Status Register feature for detection of program or erase cycle completion Low VCC write inhibit is equal to or less than 3.2V Software and hardware data protection Page program operation - Internal address and data latches for 64 words per page - Page programming time: 0.9ms typical Low power dissipation - 30mA typical active current - 1uA typical standby current CMOS and TTL compatible inputs and outputs Package Type: - 42 lead PDIP GENERAL DESCRIPTION The MX29F1615 is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. MXIC's Flash memories offer the most cost-effective and reliable read/ write non-volatile random access memory. The MX29F1615 is packaged in 42-pin PDIP. It is designed to be reprogrammed and in standard EPROM programmers. The standard MX29F1615 offers access times as fast as 90ns,allowing operation of high-speed microprocessors without wait. To eliminate bus contention, the MX29F1615 has separate chip enables(CE) and output enable (OE) control. MXIC's Flash memories augment EPROM functionality with electrical erasure and programming. The MX29F1615 uses a command register to man...