DB3 Diode Datasheet

DB3 Datasheet, PDF, Equivalent


Part Number

DB3

Description

Bidirectional DIAC Trigger Diode

Manufacture

TAITRON

Total Page 5 Pages
Datasheet
Download DB3 Datasheet


DB3
Bidirectional DIAC Trigger Diode
DB3/DB4
Bidirectional DIAC Trigger Diode
Features
Low breakover current
Excellent symmetry
Very low leakage current
Trigger diode with a fixed voltage reference
High temperature soldering guaranteed:
250°C/10s/9.5mm lead length at 5 lbs tension
RoHS Compliance
Mechanical Data
Case:
Terminals:
Weight:
Glass Case DO-35
Plated axial leads, solderable per MIL-STD-750, method 2026
Approx. 0.13 gram
DO-35
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
PD
ITRM
TJ
TSTG
RθJA
RθJL
Description
Power Dissipation on Printed Circuit (L=10mm)
(Ta=50°C)
Repetitive Peak on-state Current (tp=20µs,
f=100Hz)
Operating Temperature Range
Storage Temperature Range
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction to Case
DB3
DB4
150
2
-40 to +110
-40 to +125
400
150
Unit
mW
A
°C
°C
° C/W
° C/W
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Rev. B/AH
Page 1 of 5

DB3
Bidirectional DIAC Trigger Diode
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
DB3/DB4
Symbol
*VBO
[ I+VBOI-I-VBOI ]
±V
VO
IBO
Tr
IB
Description
*Breakover Voltage
DB3
DB4
Breakover Voltage Symmetry
**Dynamic Breakover Voltage
*Output Voltage
*Breakover Current
*Rise Time
*Leakage Current
Min.
Max.
28 36
35 45
-3 3
5-
5-
- 50
Typ.1.5
- 10
Unit
V
V
V
V
V
µA
µs
µA
*Electrical characteristic applicable in both forward and reverse directions.
**Connected in parallel with the devices.
Conditions
**C=22nF
See Fig.4
**C=22nF, See Fig.4
1=[ IBO to IF=10mA ]
See Fig.4
See Fig.6
**C=22nF
See Fig.5
VB=0.5, VBO Max.
See Fig.4
Typical Characteristics Curves
Fig.1-Max. Power Dissipation
Fig.2- Typical Relative Variation of VBO
Ambient Temperature Ta (°C)
www.taitroncomponents.com
Junction Temperature Tj (°C)
Rev. B/AH
Page 2 of 5


Features Bidirectional DIAC Trigger Diode DB3/DB4 Bidirectional DIAC Trigger Diode Featu res • • • • • Low breakover c urrent Excellent symmetry Very low leak age current Trigger diode with a fixed voltage reference High temperature sold ering guaranteed: 250°C/10s/9.5mm lead length at 5 lbs tension DO-35 • Ro HS Compliance Mechanical Data Case: Te rminals: Weight: Glass Case DO-35 Plate d axial leads, solderable per MIL-STD-7 50, method 2026 Approx. 0.13 gram Maxi mum Ratings (T Ambient=25ºC unless not ed otherwise) Symbol Description Power Dissipation on Printed Circuit (L=10mm) (Ta=50°C) Repetitive Peak on-state Cu rrent (tp=20µs, f=100Hz) Operating Tem perature Range Storage Temperature Rang e Thermal Resistance Junction to Ambien t Air Thermal Resistance Junction to Ca se DB3 150 2 -40 to +110 -40 to +125 40 0 150 DB4 Unit mW A °C °C ° C/W ° C /W PD ITRM TJ TSTG RθJA RθJL TAITRO N COMPONENTS INCORPORATED www.taitronco mponents.com Tel: Fax: (800)-TAITRON (800)-824-8766 (800)-TAITFAX (800)-824-8329 (661.
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