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HY27UF082G2B

Hynix Semiconductor

2Gb NAND FLASH

1 HY27UF(08/16)2G2B Series 2Gbit (256Mx8bit) NAND Flash 2Gb NAND FLASH HY27UF(08/16)2G2B This document is a general pr...


Hynix Semiconductor

HY27UF082G2B

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Description
1 HY27UF(08/16)2G2B Series 2Gbit (256Mx8bit) NAND Flash 2Gb NAND FLASH HY27UF(08/16)2G2B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.2 / Jan. 2008 1 1 HY27UF(08/16)2G2B Series 2Gbit (256Mx8bit) NAND Flash Document Title 2Gbit (256Mx8bit) NAND Flash Memory Revision History Revision No. 0.0 Initial Draft. 1) Add ULGA Package. 0.1 - Figures & texts are added. 2) Change tRCBSY to tRBSY 3) Change figure 13 0.2 1) Delete Preliminary Jan. 09. 2008 Sep. 11. 2007 Preliminary History Draft Date Jul. 03. 2007 Remark Preliminary Rev 0.2 / Jan. 2008 2 1 HY27UF(08/16)2G2B Series 2Gbit (256Mx8bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications MULTIPLANE ARCHITECTURE - Array is split into two independent planes. Parallel Operations on both planes are available, halving Program and erase time. NAND INTERFACE - x8/x16 bus width. - Address/ Data Multiplexing - Pinout compatiblity for all densities SUPPLY VOLTAGE - 3.3V device : Vcc = 2.7 V ~3.6 V MEMORY CELL ARRAY - x8 : (2K + 64) bytes x 64 pages x 2048 blocks - x16 : (1K + 32) words x 64 pages x 2048 blocks PAGE SIZE - (2K + 64 spare) Bytes - (1K + 32 spare) Words BLOCK SIZE - (128K + 4Kspare) Bytes - (64K + 2Kspare) Words PAGE READ / PROGRAM - Random access : 25us (max.) - Sequential access : 25ns (min.) - Pag...




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