MX29GA257EF

MX29GA129E C/F MX29GA257E C/F MX29GA129/257E C/F DATASHEET P/N:PM1503 REV. 0.01, AUG. 10, 2009 1 ADVANCED INFORMATION MX29GA129E C/F MX29GA257E C/F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations Word mode switchable - 16,777,216 x 16 - 8,388,608 x 16 64KW uniform sector architecture - MX29GA257E C/F: 256 equal sectors - MX29GA129E C/F: 128 equal sectors 8-word page read buffer 32-word write buffer Latch-up protected to 100mA from -1V to 1.5xVcc Low Vcc write inhibit : Vcc ≤ VLKO Compatible with JEDEC standard - Pinout and software compatible to single power supply Flash Deep power down mode PERFORMANCE High Performance - MX29GA257E C/F: 90ns (Vcc=3.0~3.6V), 100ns (Vcc=2.7~3.6V) - MX29GA129E C/F: 90ns (Vcc=2.7~3.6V) - Page access time: 25ns - Fast program time: 11us/word - Fast erase time: 0.6s/sector Low Power Consumption - Low active read current: 30mA (typical) at 5MHz - Low standby current: 30uA (typical) Typical 100,000 erase/program cycle 20 years data retention SOFTWARE FEATURES Program/Erase Suspend & Program/Erase Resume - Suspends sector erase operation to read data from or program data to another sector which is not being erased - Suspends sector program operation to read data from another sector which is not being program Status Reply - Data# Polling & Toggle bits provide detection of ...