HY27US081G1M

Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27US081G1M HY27US161G1M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.2 / May. 2007 1 Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - 1st cycle : Manufacturer Code - 2nd cycle : Device Code SUPPLY VOLTAGE - VCC = 2.7 to 3.6V : HY27USxx1G1M Memory Cell Array = (512+16) Bytes x 32 Pages x 8,192 Blocks = (256+8) Words x 32 Pages x 8,192 Blocks PAGE SIZE - x8 device : (512 + 16 spare) Bytes : HY27US081G1M - x16 device : (256+ 8 spare) Words : HY27US161G1M AUTOMATIC PAGE 0 READ AT POWER-UP OPTION - Boot from NAND support - Automatic Memory Download SERIAL NUMBER OPTION HARDWARE DATA PROTECTION - Program/Erase locked during Power transitions DATA INTEGRITY - 100,000 Program/Erase cycles (with 4bit/528byte ECC) - 10 years Data Retention PACKAGE - HY27US(08/16)1G1M-T(P) : 48-Pin TSOP1 (12 x 20 x 1.2 mm) - HY27US(08/16)1G1M-T (Lead) - HY27US(08/16)1G1M-TP (Lead Free) - HY27US081G1M-S(P) : 48-Pin USOP1 (12 x 17 x 0....