HY27UF162G2A

HY27UF(08/16)2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.4 / Mar. 2007 1 HY27UF(08/16)2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Memory Revision History Revision No. 0.01 0.1 0.2 Initial Draft. 1) Change NOP 2) Correct 5th Read ID 3) Chnage AC Timing Characteristics 1) Add x16 features. 1) Chnage AC Timing Characteristics tR Before 0.3 After 25 20 tCRRH 50 100 tRHOH 100 15 tRLOH 15 5 Nov. 21. 2006 Sep. 07. 2006 Preliminary May. 18. 2006 Preliminary History Draft Date Jan. 24. 2006 Remark Preliminary 2) Add AC Timing Characteristics - tCOH = 15ns (min) 3) Correct copy back function 4) Delet Preliminary. 0.4 1) Delete cache read function in x16 product Mar. 21. 2007 Rev 0.4 / Mar. 2007 2 HY27UF(08/16)2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - 1st cycle: Manufacturer Code - 2nd cycle: Device Code SUPPLY VOLTAGE - VCC = 2.7 to 3.6V : HY27UFxx2G2A Memory Cell A...