HY27UH08AG5B

1 HY27UH08AG5B Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.2 / Jan. 2008 1 1 HY27UH08AG5B Series 16Gbit (2Gx8bit) NAND Flash Document Title 16Gbit (2Gx8bit) NAND Flash Memory Revision History Revision No. 0.0 Initial Draft. 1) Correct Cache Read figure 0.1 2) Correct Block Erase 3) Correct Multiplane operation 0.2 1) Delete Preliminary Jan. 16. 2007 Jun. 27. 2007 Preliminary History Draft Date Jun. 22. 2007 Remark Preliminary Rev 0.2 / Jan. 2008 2 1 HY27UH08AG5B Series 16Gbit (2Gx8bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications MULTIPLANE ARCHITECTURE - Array is split into two independent planes. Parallel Operations on both planes are available, halving Program and erase time. NAND INTERFACE - x8 bus width. - Address/ Data Multiplexing - Pinout compatiblity for all densities SUPPLY VOLTAGE - 3.3V device : Vcc = 2.7 V ~3.6 V MEMORY CELL ARRAY - x8 : (2K + 64) bytes x 64 pages x 16384 blocks PAGE SIZE - (2K + 64 spare) Bytes BLOCK SIZE - (128K + 4Kspare) Bytes PAGE READ / PROGRAM - Random access : 25us (max.) - Sequential access : 25ns (min.) - Page program time : 200us (typ.) - Multi-page program time (2 pages) : 200us (Typ) COPY BACK PROGRAM - Automatic block download without la...