DatasheetsPDF.com

MT29F128G08AMAAA Dataheets PDF



Part Number MT29F128G08AMAAA
Manufacturers Micron
Logo Micron
Description NAND Flash Memory
Datasheet MT29F128G08AMAAA DatasheetMT29F128G08AMAAA Datasheet (PDF)

Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A[J/K/M]AAA MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F128G08A[K/M]CAB, MT29F256G08AUCAB Features • Open NAND Flash Interface (ONFI) 2.2-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 8640 bytes (8192 + 448 bytes) – Block size: 128 pages (1024K + 56K bytes) – Plane size: 2 planes x 2048 bl.

  MT29F128G08AMAAA   MT29F128G08AMAAA


Document
Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A[J/K/M]AAA MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F128G08A[K/M]CAB, MT29F256G08AUCAB Features • Open NAND Flash Interface (ONFI) 2.2-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 8640 bytes (8192 + 448 bytes) – Block size: 128 pages (1024K + 56K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 32Gb: 4096 blocks; 64Gb: 8192 blocks; 128Gb: 16,384 blocks; 256Gb: 32,786 blocks • Synchronous I/O performance – Up to synchronous timing mode 5 – Clock rate: 10ns (DDR) – Read/write throughput per pin: 200 MT/s • Asynchronous I/O performance – Up to asynchronous timing mode 5 – tRC/tWC: 20ns (MIN) – Read/write throughput per pin: 50 MT/s • Array performance – Read page: 35µs (MAX) – Program page: 350µs (TYP) – Erase block: 1.5ms (TYP) • Operating Voltage Range – VCC: 2.7–3.6V – VCCQ: 1.7–1.95V, 2.7–3.6V • Command set: ONFI NAND Flash Protocol • Advanced Command Set – Program cache – Read cache sequential – Read cache random – One-time programmable (OTP) mode – Multi-plane commands – Multi-LUN operations – Read unique ID – Copyback • First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 114). • RESET (FFh) required as first command after power-on • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status • Data strobe (DQS) signals provide a hardware method for synchronizing data DQ in the synchronous interface • Copyback operations supported within the plane from which data is read • Quality and reliability – Data retention: JESD47G compliant; see qualification report – Endurance: 60,000 PROGRAM/ERASE cycles • Operating temperature: – Commercial: 0°C to +70°C – Industrial (IT): –40ºC to +85ºC • Package – 52-pad LGA – 48-pin TSOP – 100-ball BGA – 132-ball BGA Note: 1. The ONFI 2.2 specification is available at www.onfi.org. PDF: 09005aef83e0bed4 M73A_32Gb_64Gb_128Gb_256Gb_AsyncSync_NAND.pdf Rev. F 5/12 EN 1 Products and specifications discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Numbering MT 29F 32G 08 Micron Technology NAND Flash 29F = NAND Flash memory A B A A A WP Z ES :A Design Revision A = First revision Production Status Blank = Production ES = Engineering sample Density 32G = 32Gb 64G = 64Gb 128G = 128Gb 256G = 256Gb Reserved for Future Use Blank Blank = Polyimide Process Not Applied Z = Polyimide Process Applied Wafer Process Applied 08 = 8 bits Device Width Level Bit/Cell A 1-bit Blank = Commercial (0°C to +70°C) IT = Industrial (–40°C to +85°C) Operating Temperature Range Speed Grade (synchronous mode only) -10 = 200 MT/s Classification Die # of CE# # of R/B# I/O B E F J K M U 1 2 2 4 4 4 8 1 2 2 2 2 4 4 1 2 2 2 2 4 4 Common Separate Common Common Separate Separate Separate C5 = 52-pad VLGA 14mm x 18mm x 1.0mm1 H1 = 100-ball VBGA 12mm x 18mm x 1.0mm1 H2 = 100-ball TBGA 12mm x 18mm x 1.2mm1 H3 = 100-ball LBGA 12mm x 18mm x 1.4mm1 J1 = 132-ball VBGA 12mm x 18mm x 1.0mm1 J2 = 132-ball TBGA 12mm x 18mm x 1.2mm1 J3 = 132-ball LBGA 12mm x 18mm x 1.4mm1 WP = 48-pin TSOP1 (CPL) A = Async only B = Sync/Async Package Code Interface A = VCC: 3.3V (2.7–3.6V), VCCQ: 3.3V (2.7–3.6V) C = VCC: 3.3V (2.7–3.6V), VCCQ: 1.8V (1.7–1.95V) Operating Voltage Range Generation Feature Set A = First set of device features Note: 1. Pb-free package. PDF: 09005aef83e0bed4 M73A_32Gb_64Gb_128Gb_256Gb_AsyncSync_NAND.pdf Rev. F 5/12 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features Contents General Description ......................................................................................................................................... 9 Asynchronous and Synchronous Signal Descriptions ......................................................................................... 9 Signal Assignments ......................................................................................................................................... .


MT29F128G08AKCAB MT29F128G08AMAAA MT29F128G08AMCAB


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)