DatasheetsPDF.com

MT29F64G08AKCCB Dataheets PDF



Part Number MT29F64G08AKCCB
Manufacturers Micron
Logo Micron
Description NAND Flash Memory
Datasheet MT29F64G08AKCCB DatasheetMT29F64G08AKCCB Datasheet (PDF)

Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Features • Open NAND Flash Interface (ONFI) 2.2-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 4320 bytes (4096 + 224 bytes) – Block size: 128 pages (512K + 28K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 16Gb: 4096 blocks; 32Gb: 8192 blocks; 64Gb:.

  MT29F64G08AKCCB   MT29F64G08AKCCB


Document
Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Features • Open NAND Flash Interface (ONFI) 2.2-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 4320 bytes (4096 + 224 bytes) – Block size: 128 pages (512K + 28K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 16Gb: 4096 blocks; 32Gb: 8192 blocks; 64Gb: 16,384 blocks • Synchronous I/O performance – Up to synchronous timing mode 5 – Clock rate: 10ns (DDR) – Read/write throughput per pin: 200 MT/s • Asynchronous I/O performance – Up to asynchronous timing mode 5 – tRC/tWC: 20ns (MIN) • Array performance – Read page: 35µs (MAX) – Program page: 350µs (TYP) – Erase block: 1.5ms (TYP) • Operating Voltage Range – VCC: 2.7–3.6V – VCCQ: 1.7-1.95V, 2.7–3.6V • Command set: ONFI NAND Flash Protocol • Advanced Command Set – Program cache – Read cache sequential – Read cache random – One-time programmable (OTP) mode – Multi-plane commands – Multi-LUN operations – Read unique ID – Copyback • First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 100). • RESET (FFh) required as first command after power-on • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status • Data strobe (DQS) signals provide a hardware method for synchronizing data DQ in the synchronous interface • Copyback operations supported within the plane from which data is read • Quality and reliability – Data retention: JESD47 compliant; see qualification report – Endurance: 60,000 PROGRAM/ERASE cycles • Operating temperature: – Commercial: 0°C to +70°C – Industrial (IT): –40ºC to +85ºC • Package – 48-pin TSOP – 100-ball BGA Note: 1. The ONFI 2.2 specification is available at www.onfi.org. PDF: 09005aef844588dc M72A_16Gb_32Gb_64Gb_AsyncSync_NAND.pdf – Rev. G 5/12 EN 1 Products and specifications discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Numbering MT 29F 16G 08 Micron Technology NAND Flash 29F = NAND Flash memory A B A C A WP Z ES :C Design Revision C = Third revision Production Status Blank = Production ES = Engineering sample Density 16G = 16Gb 32G = 32Gb 64G = 64Gb Reserved for Future Use Blank Device Width 08 = 8 bits Wafer Process Applied Blank = Polyimide Process Not Applied Z = Polyimide Process Applied Level A Bit/Cell 1-bit Operating Temperature Range Blank = Commercial (0°C to +70°C) IT = Industrial (–40°C to +85°C) I/O Common Separate Common Separate Classification B E F K Die # of CE# # of R/B# 1 1 1 2 2 2 2 2 2 4 2 2 Speed Grade (synchronous mode only) -10 = 200 MT/s Package Code H1 = 100-ball VBGA 12mm x 18mm x 1.0mm1 H2 = 100-ball TBGA 12mm x 18mm x 1.2mm 1 WP = 48-pin TSOP1 (CPL) Operating Voltage Range A = VCC: 3.3V (2.7–3.6V), VCCQ: 3.3V (2.7–3.6V) C = VCC: 3.3V (2.7–3.6V), VCCQ: 1.8V (1.7–2.95V) Interface A = Async only B = Sync/Async Generation Feature Set C = Third set of device features Note: 1. Pb-free package. PDF: 09005aef844588dc M72A_16Gb_32Gb_64Gb_AsyncSync_NAND.pdf – Rev. G 5/12 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features Contents General Description ......................................................................................................................................... 9 Asynchronous and Synchronous Signal Descriptions ......................................................................................... 9 Signal Assignments ......................................................................................................................................... 11 Package Dimensions ....................................................................................................................................... 13 Architecture ................................................................................................................................................... 16 Device and Array Organization ..........................................................................................................


MT29F32G08AECCB MT29F64G08AKCCB MT29F64G08CBAAA


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)