MT29F128G08CECAB

Micron Confidential and Proprietary 64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F64G08CBAA[A/B], MT29F128G08C[E/F]AAA, MT29F128G08CFAAB, MT29F256G08C[J/K/M]AAA, MT29F256G08CJAAB, MT29F512G08CUAAA, MT29F64G08CBCAB, MT29F128G08CECAB, MT29F256G08C[K/M]CAB, MT29F512G08CUCAB Features Open NAND Flash Interface (ONFI) 2.2-compliant1 Multiple-level cell (MLC) technology Organization – Page size x8: 8640 bytes (8192 + 448 bytes) – Block size: 256 pages (2048K + 112K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 64Gb: 4096 blocks; 128Gb: 8192 blocks; 256Gb: 16,384 blocks; 512Gb: 32,786 blocks Synchronous I/O performance – Up to synchronous timing mode 52 – Clock rate: 10ns (DDR) – Read/write throughput per pin: 200 MT/s Asynchronous I/O performance – Up to asynchronous timing mode 5 – tRC/tWC: 20ns (MIN) – Up to asynchronous timing mode 5 – Read/write throughput per pin: 50 MT/s Array performance – Read page: 75µs (MAX) – Program page: 1300µs (TYP) – Erase block: 3.8ms (TYP) Operating Voltage Range – VCC: 2.7–3.6V – VCCQ: 1.7–1.95V, 2.7–3.6V Command set: ONFI NAND Flash Protocol Advanced Command Set – Program cache – Read cache sequential – Read cache random – One-time programmable (OTP) mode – Multi-plane commands – Multi-LUN operations – Read unique ID – Copyback First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 109). RESET (...