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R1RP0416D Dataheets PDF



Part Number R1RP0416D
Manufacturers Renesas
Logo Renesas
Description 4M High Speed SRAM
Datasheet R1RP0416D DatasheetR1RP0416D Datasheet (PDF)

R1RP0416D Series 4M High Speed SRAM (256-kword × 16-bit) Datasheet R10DS0284EJ0100 Rev.1.00 Nov.18.19 Description The R1RP0416D Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in sy.

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R1RP0416D Series 4M High Speed SRAM (256-kword × 16-bit) Datasheet R10DS0284EJ0100 Rev.1.00 Nov.18.19 Description The R1RP0416D Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII. Features • Single 5.0V supply: 5.0V ± 10% • Access time: 10ns / 12ns (max) • Completely static memory ⎯ No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible ⎯ All inputs and outputs • Operating current: 170mA / 160mA (max) • TTL standby current: 40mA (max) • CMOS standby current : 5mA (max) : 1.0mA (max) (L-version) : 0.5mA (max) (S-version) • Data retention current : 0.5mA (max) (L-version) : 0.2mA (max) (S-version) • Data retention voltage: 2V (min) (L-version , S-version) • Center VCC and VSS type pin out Ordering Information Type No. R1RP0416DGE-2PR R1RP0416DGE-2LR R1RP0416DGE-2SR R1RP0416DSB-0PR R1RP0416DSB-2PR R1RP0416DSB-2LR R1RP0416DSB-2SR Access time 12ns 12ns 12ns 10ns 12ns 12ns 12ns Version Normal L-Version S-Version Normal Normal L-Version S-Version Package 400-mil 44-pin plastic SOJ 400-mil 44-pin plastic TSOPII R10DS0284EJ0100 Rev.1.00 Nov.18.19 Page 1 of 13 R1RP0416D Series Pin Arrangement Pin Description A0 to A17 I/O1 to I/O16 CS# OE# WE# UB# LB# VCC VSS NC Pin name Address input Data input/output Chip select Output enable Write enable Upper byte select Lower byte select Power supply Ground No connection Function R10DS0284EJ0100 Rev.1.00 Nov.18.19 Page 2 of 13 R1RP0416D Series Block Diagram R10DS0284EJ0100 Rev.1.00 Nov.18.19 Page 3 of 13 R1RP0416D Series Operation Table CS# OE# WE# LB# UB# H  LHH  L LHL L L LHLH L LHHL L LHHH LLLL L  L LH L LHL L  LHH Note: H: VIH, L: VIL, : Mode Standby Output disable Read Lower byte read Upper byte read ⎯ Write Lower byte write Upper byte write ⎯ VIH or VIL VCC current ISB, ISB1 ICC ICC ICC ICC ICC ICC ICC ICC ICC I/O1−I/O8 High-Z High-Z Output Output High-Z High-Z Input Input High-Z High-Z I/O9−I/O16 High-Z High-Z Output High-Z Output High-Z Input High-Z Input High-Z Ref. cycle ⎯ ⎯ Read cycle Read cycle Read cycle ⎯ Write cycle Write cycle Write cycle ⎯ Absolute Maximum Ratings Parameter Symbol Value Unit Supply voltage relative to VSS VCC −0.5 to +7.0 V Voltage on any pin relative to VSS VT −0.5*1 to VCC + 0.5*2 V Power dissipation PT 1.0 W Operating temperature Topr 0 to +70 C Storage temperature Tstg −55 to +125 C Storage temperature under bias Tbias −10 to +85 C Notes: 1. VT (min) = −2.0V for pulse width (under shoot) ≤ 6ns. 2. VT (max) = VCC + 2.0V for pulse width (over shoot) ≤ 6ns. Recommended DC Operating Conditions Parameter Symbol Min Typ Supply voltage VCC*3 4.5 5.0 VSS*4 0 0 Input voltage VIH 2.2 ⎯ VIL −0.5*1 ⎯ Notes: 1. VIL (min) = −2.0V for pulse width (under shoot) ≤ 6ns. 2. VIH (max) = VCC + 2.0V for pulse width (over shoot) ≤ 6ns. 3. The supply voltage with all VCC pins must be on the same level. 4. The supply voltage with all VSS pins must be on the same level. (Ta = 0 to +70°C) Max Unit 5.5 V 0 V VCC + 0.5*2 V 0.8 V R10DS0284EJ0100 Rev.1.00 Nov.18.19 Page 4 of 13 R1RP0416D Series DC Characteristics Parameter Symbol Min (Ta = 0 to +70°C, VCC = 5.0V ± 10%, VSS = 0V) Max Unit Test conditions Input leakage current |ILI| ⎯ 2 A VIN = VSS to VCC Output leakage current |ILO| ⎯ 2 A VIN = VSS to VCC Operating power supply 10ns cycle ICC ⎯ 170 mA Min cycle current CS# = VIL, IOUT = 0mA 12ns cycle ICC ⎯ 160 mA Other inputs = VIH/VIL Standby power supply current ISB ⎯ 40 mA Min cycle, CS# = VIH, Other inputs = VIH/VIL ISB1 ⎯ 5 mA f = 0MHz ⎯*1 1.0*1 mA VCC  CS#  VCC − 0.2V, (1) 0V  VIN  0.2V or ⎯*2 0.5*2 mA (2) VCC  VIN  VCC − 0.2V Output voltage VOL ⎯ 0.4 VOH 2.4 ⎯ Notes: 1. This characteristics is guaranteed only for L-version. 2. This characteristics is guaranteed only for S-version. V IOL = 8mA V IOH = −4mA Capacitance Parameter Symbol Min Max Input capacitance*1 CIN ⎯ 6 Input/output capacitance*1 CI/O ⎯ 8 Note: 1. This parameter is sampled and not 100% tested. (Ta = +25C, f = 1.0MHz) Unit Test conditions pF VIN = 0V pF VI/O = 0V R10DS0284EJ0100 Rev.1.00 Nov.18.19 Page 5 of 13 R1RP0416D Series AC Characteristics Test Conditions (Ta = 0 to +70°C, VCC = 5.0V ± 10%, unless otherwise noted.) • Input pulse levels: 3.0V/0.0V • Input rise and fall time: 3ns • Input and output timing refere.


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