Document
R1RP0416D Series
4M High Speed SRAM (256-kword × 16-bit)
Datasheet
R10DS0284EJ0100 Rev.1.00
Nov.18.19
Description
The R1RP0416D Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.
Features
• Single 5.0V supply: 5.0V ± 10% • Access time: 10ns / 12ns (max) • Completely static memory
⎯ No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible
⎯ All inputs and outputs • Operating current: 170mA / 160mA (max) • TTL standby current: 40mA (max) • CMOS standby current : 5mA (max)
: 1.0mA (max) (L-version) : 0.5mA (max) (S-version) • Data retention current : 0.5mA (max) (L-version) : 0.2mA (max) (S-version) • Data retention voltage: 2V (min) (L-version , S-version) • Center VCC and VSS type pin out
Ordering Information
Type No. R1RP0416DGE-2PR R1RP0416DGE-2LR R1RP0416DGE-2SR R1RP0416DSB-0PR R1RP0416DSB-2PR R1RP0416DSB-2LR R1RP0416DSB-2SR
Access time 12ns 12ns 12ns 10ns 12ns 12ns 12ns
Version Normal L-Version S-Version Normal Normal L-Version S-Version
Package 400-mil 44-pin plastic SOJ
400-mil 44-pin plastic TSOPII
R10DS0284EJ0100 Rev.1.00 Nov.18.19
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R1RP0416D Series
Pin Arrangement
Pin Description
A0 to A17 I/O1 to I/O16 CS# OE# WE# UB# LB# VCC VSS NC
Pin name
Address input Data input/output Chip select Output enable Write enable Upper byte select Lower byte select Power supply Ground No connection
Function
R10DS0284EJ0100 Rev.1.00 Nov.18.19
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R1RP0416D Series
Block Diagram
R10DS0284EJ0100 Rev.1.00 Nov.18.19
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R1RP0416D Series
Operation Table
CS# OE# WE# LB# UB# H LHH L LHL L L LHLH L LHHL L LHHH LLLL L L LH L LHL L LHH
Note: H: VIH, L: VIL, :
Mode Standby Output disable
Read Lower byte read Upper byte read
⎯ Write Lower byte write Upper byte write
⎯ VIH or VIL
VCC current ISB, ISB1 ICC ICC ICC ICC ICC ICC ICC ICC ICC
I/O1−I/O8 High-Z High-Z Output Output High-Z High-Z Input Input High-Z High-Z
I/O9−I/O16 High-Z High-Z Output High-Z Output High-Z Input High-Z Input High-Z
Ref. cycle ⎯ ⎯
Read cycle Read cycle Read cycle
⎯ Write cycle Write cycle Write cycle
⎯
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to VSS
VCC
−0.5 to +7.0
V
Voltage on any pin relative to VSS
VT
−0.5*1 to VCC + 0.5*2
V
Power dissipation
PT
1.0
W
Operating temperature
Topr
0 to +70
C
Storage temperature
Tstg
−55 to +125
C
Storage temperature under bias
Tbias
−10 to +85
C
Notes: 1. VT (min) = −2.0V for pulse width (under shoot) ≤ 6ns. 2. VT (max) = VCC + 2.0V for pulse width (over shoot) ≤ 6ns.
Recommended DC Operating Conditions
Parameter
Symbol
Min
Typ
Supply voltage
VCC*3
4.5
5.0
VSS*4
0
0
Input voltage
VIH
2.2
⎯
VIL
−0.5*1
⎯
Notes: 1. VIL (min) = −2.0V for pulse width (under shoot) ≤ 6ns. 2. VIH (max) = VCC + 2.0V for pulse width (over shoot) ≤ 6ns. 3. The supply voltage with all VCC pins must be on the same level. 4. The supply voltage with all VSS pins must be on the same level.
(Ta = 0 to +70°C)
Max
Unit
5.5
V
0
V
VCC + 0.5*2
V
0.8
V
R10DS0284EJ0100 Rev.1.00 Nov.18.19
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R1RP0416D Series
DC Characteristics
Parameter
Symbol
Min
(Ta = 0 to +70°C, VCC = 5.0V ± 10%, VSS = 0V)
Max
Unit
Test conditions
Input leakage current
|ILI|
⎯
2
A
VIN = VSS to VCC
Output leakage current
|ILO|
⎯
2
A
VIN = VSS to VCC
Operating power supply 10ns cycle
ICC
⎯
170
mA Min cycle
current
CS# = VIL, IOUT = 0mA
12ns cycle
ICC
⎯
160
mA
Other inputs = VIH/VIL
Standby power supply current
ISB
⎯
40
mA Min cycle, CS# = VIH,
Other inputs = VIH/VIL
ISB1
⎯
5
mA f = 0MHz
⎯*1
1.0*1
mA
VCC CS# VCC − 0.2V,
(1) 0V VIN 0.2V or
⎯*2
0.5*2
mA (2) VCC VIN VCC − 0.2V
Output voltage
VOL
⎯
0.4
VOH
2.4
⎯
Notes: 1. This characteristics is guaranteed only for L-version.
2. This characteristics is guaranteed only for S-version.
V
IOL = 8mA
V
IOH = −4mA
Capacitance
Parameter
Symbol
Min
Max
Input capacitance*1
CIN
⎯
6
Input/output capacitance*1
CI/O
⎯
8
Note: 1. This parameter is sampled and not 100% tested.
(Ta = +25C, f = 1.0MHz)
Unit
Test conditions
pF
VIN = 0V
pF
VI/O = 0V
R10DS0284EJ0100 Rev.1.00 Nov.18.19
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R1RP0416D Series
AC Characteristics
Test Conditions (Ta = 0 to +70°C, VCC = 5.0V ± 10%, unless otherwise noted.) • Input pulse levels: 3.0V/0.0V • Input rise and fall time: 3ns • Input and output timing refere.