R1RP0416DGE-2LR

R1RP0416D Series 4M High Speed SRAM (256-kword × 16-bit) Datasheet R10DS0284EJ0100 Rev.1.00 Nov.18.19 Description The R1RP0416D Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII. Features Single 5.0V supply: 5.0V ± 10% Access time: 10ns / 12ns (max) Completely static memory ⎯ No clock or timing strobe required Equal access and cycle times Directly TTL compatible ⎯ All inputs and outputs Operating current: 170mA / 160mA (max) TTL standby current: 40mA (max) CMOS standby current : 5mA (max) : 1.0mA (max) (L-version) : 0.5mA (max) (S-version) Data retention current : 0.5mA (max) (L-version) : 0.2mA (max) (S-version) Data retention voltage: 2V (min) (L-version , S-version) Center VCC and VSS type pin out Ordering Information Type No. R1RP0416DGE-2PR R1RP0416DGE-2LR R1RP0416DGE-2SR R1RP0416DSB-0PR R1RP0416DSB-2PR R1RP0416DSB-2LR R1RP0416DSB-2SR Access time 12ns 12ns 12ns 10ns 12ns 12ns 12ns Version Normal L-Version S-Version Normal Normal L-Version S-Version Package 400-mil 44-pin plastic SOJ 400-mil 44-pin plastic TSOPII R10DS0284EJ0100 Rev.1.00 Nov.18.1...