R1RP0408D Series
4M High Speed SRAM (512-kword × 8-bit)
REJ03C0112-0200 Rev. 2.00 Dec.1.2008
Description
The R1RP0408D ...
R1RP0408D Series
4M High Speed SRAM (512-kword × 8-bit)
REJ03C0112-0200 Rev. 2.00 Dec.1.2008
Description
The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-
transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 36-pin plastic SOJ.
Features
Single 5.0 V supply: 5.0 V ± 10% Access time: 10 ns / 12 ns (max) Completely static memory No clock or timing strobe required Equal access and cycle times Directly TTL compatible All inputs and outputs Operating current: 140mA /130mA (max) TTL standby current: 40 mA (max) CMOS standby current : 5 mA (max) : 1.0 mA (max) (L-version) Data retention current: 0.5 mA (max) (L-version) Data retention voltage: 2 V (min) (L-version) Center VCC and VSS type pin out
RJE03C0112-0200
Rev.2.00,
Dec.1.2008, page 1 of 12
R1RP0408D Series
Ordering Information
Type No. R1RP0408DGE-0PR R1RP0408DGE-2PR R1RP0408DGE-2LR Access time 10 ns 12 ns 12 ns Package 400-mil 36-pin plastic SOJ (36P0K)
Pin Arrangement
36-pin SOJ A0 A1 A2 A3 A4 CS# I/O1 I/O2 VCC VSS I/O3 I/O4 WE# A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 (Top View) 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 NC A18 A17 A16 A15 OE# I/O8 I/O7 V...
