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R1RP0404DGE-2PR Dataheets PDF



Part Number R1RP0404DGE-2PR
Manufacturers Renesas
Logo Renesas
Description 4M High Speed SRAM
Datasheet R1RP0404DGE-2PR DatasheetR1RP0404DGE-2PR Datasheet (PDF)

R1RP0404D Series 4M High Speed SRAM (1-Mword × 4-bit) REJ03C0116-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The R1RP0404D is packaged in 400-mil 32-pin S.

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R1RP0404D Series 4M High Speed SRAM (1-Mword × 4-bit) REJ03C0116-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The R1RP0404D is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features • Single 5.0 V supply: 5.0 V ± 10% • Access time 12 ns (max) • Completely static memory  No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible  All inputs and outputs • Operating current: 130 mA (max) • TTL standby current: 40 mA (max) • CMOS standby current : 5 mA (max) : 1.0 mA (max) (L-version) • Data retention current: 0.5 mA (max) (L-version) • Data retention voltage: 2.0 V (min) (L-version) • Center VCC and VSS type pin out Rev.1.00, Mar.12.2004, page 1 of 11 R1RP0404D Series Ordering Information Type No. R1RP0404DGE-2PR R1RP0404DGE-2LR Access time 12 ns 12 ns Package 400-mil 32-pin plastic SOJ (32P0K) Pin Arrangement 32-pin SOJ A0 A1 A2 A3 A4 CS# I/O1 VCC VSS I/O2 WE# A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Top view) 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A19 A18 A17 A16 A15 OE# I/O4 VSS VCC I/O3 A14 A13 A12 A11 A10 NC Pin Description Pin name A0 to A19 I/O1 to I/O4 CS# OE# WE# VCC VSS NC Function Address input Data input/output Chip select Output enable Write enable Power supply Ground No connection Rev.1.00, Mar.12.2004, page 2 of 11 R1RP0404D Series Block Diagram (LSB) A14 A13 A12 A5 A6 A7 A11 A10 A3 A1 (MSB) I/O1 . . . I/O4 Internal voltage generator Row decoder 1024-row × 64-column × 16-block × 4-bit (4,194,304 bits) VCC VSS CS Column I/O Input data control Column decoder CS WE# CS# A8 A9 A19 A17 A18 A15 A0 A2 A4 A16 (LSB) (MSB) OE# CS Rev.1.00, Mar.12.2004, page 3 of 11 R1RP0404D Series Operation Table CS# H L L L L OE# × H L H L WE# × H H L L Mode Standby Output disable Read Write Write VCC current ISB, ISB1 ICC ICC ICC ICC I/O High-Z High-Z DOUT DIN DIN Ref. cycle   Read cycle (1) to (3) Write cycle (1) Write cycle (2) Note: H: VIH, L: VIL, ×: VIH or VIL Absolute Maximum Ratings Parameter Supply voltage relative to VSS Voltage on any pin relative to VSS Power dissipation Operating temperature Storage temperature Storage temperature under bias Symbol VCC VT PT Topr Tstg Tbias Value −0.5 to +7.0 −0.5* to VCC + 0.5* 1 2 Unit V V W °C °C °C 1.0 0 to +70 −55 to +125 −10 to +85 Notes: 1. VT (min) = −2.0 V for pulse width (under shoot) ≤ 6 ns. 2. VT (max) = VCC + 2.0 V for pulse width (over shoot) ≤ 6 ns. Recommended DC Operating Conditions (Ta = 0 to +70°C) Parameter Supply voltage Symbol VCC* VSS* Input voltage Notes: 1. 2. 3. 4. VIH VIL 3 4 Min 4.5 0 2.2 −0.5* 1 Typ 5.0 0   Max 5.5 0 VCC + 0.5* 0.8 2 Unit V V V V VIL (min) = −2.0 V for pulse width (under shoot) ≤ 6 ns. VIH (max) = VCC + 2.0 V for pulse width (over shoot) ≤ 6 ns. The supply voltage with all VCC pins must be on the same level. The supply voltage with all VSS pins must be on the same level. Rev.1.00, Mar.12.2004, page 4 of 11 R1RP0404D Series DC Characteristics (Ta = 0 to +70°C, VCC = 5.0 V ± 10%, VSS = 0 V) Parameter Input leakage current Output leakage current Operation power supply current Symbol IILII IILOI ICC Min    Max 2 2 130 Unit µA µA mA Test conditions VIN = VSS to VCC VIN = VSS to VCC Min cycle CS# = VIL, lOUT = 0 mA Other inputs = VIH/VIL Min cycle, CS# = VIH, Other inputs = VIH/VIL f = 0 MHz VCC ≥ CS# ≥ VCC − 0.2 V, (1) 0 V ≤ VIN ≤ 0.2 V or (2) VCC ≥ VIN ≥ VCC − 0.2 V IOL = 8 mA IOH = −4 mA Standby power supply current ISB ISB1   40 5 mA mA * Output voltage Note: VOL VOH  2.4 1 1.0* 0.4  1 V V 1. This characteristics is guaranteed only for L-version. Capacitance (Ta = +25°C, f = 1.0 MHz) Parameter Input capacitance* Note: 1 1 Symbol CIN CI/O Min   Max 6 8 Unit pF pF Test conditions VIN = 0 V VI/O = 0 V Input/output capacitance* 1. This parameter is sampled and not 100% tested. Rev.1.00, Mar.12.2004, page 5 of 11 R1RP0404D Series AC Characteristics (Ta = 0 to +70°C, VCC = 5.0 V ± 10%, unless otherwise noted.) Test Conditions • Input pulse levels: 3.0 V/0.0 V • Input rise and fall time: 3 ns • Input and output timing reference levels: 1.5 V • Output load: See figures (Including scope and jig) 1.5 V RL = 50 Ω DOUT 30 pF 255 Ω 5 pF 5V 480 Ω DOUT Zo = 50 Ω Output load (A) Output load (B) (for tCLZ, tOLZ, tCHZ, tOHZ, tWHZ, and tOW) Read Cycle R1RP0404D -2 Parameter Read cycle time Address access time Chip select access time Output enable to output valid Output hold from address change Chip select to output in low-Z Output enable to output in low-Z Chip deselect to output in high-Z Output disable to output in high-Z Symbol tRC tAA tACS tOE tOH tCLZ tOLZ tC.


R1RP0404D R1RP0404DGE-2PR R1RP0404DGE-2LR


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