Document
R1RW0408D Series
4M High Speed SRAM (512-kword × 8-bit)
Datasheet
R10DS0286EJ0100 Rev.1.00
Nov.18.19
Description
The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408D is packaged in 400-mil 36-pin SOJ for high density surface mounting.
Features
• Single 3.3V supply: 3.3V ± 0.3V • Access time: 12ns (max) • Completely static memory
⎯ No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible
⎯ All inputs and outputs • Operating current: 100mA (max) • TTL standby current: 40mA (max) • CMOS standby current : 5mA (max)
: 0.8mA (max) (L-version) • Data retention current : 0.4mA (max) (L-version) • Data retention voltage: 2.0V (min) (L-version) • Center VCC and VSS type pin out
Ordering Information
Type No. R1RW0408DGE-2PR R1RW0408DGE-2LR
Access time 12ns 12ns
Version Normal L-Version
Package 400-mil 36-pin plastic SOJ
R10DS0286EJ0100 Rev.1.00 Nov.18.19
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R1RW0408D Series
Pin Arrangement
Pin Description
A0 to A18 I/O1 to I/O8 CS# OE# WE# VCC VSS NC
Pin name
Address input Data input/output Chip select Output enable Write enable Power supply Ground No connection
Function
R10DS0286EJ0100 Rev.1.00 Nov.18.19
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R1RW0408D Series
Block Diagram
R10DS0286EJ0100 Rev.1.00 Nov.18.19
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R1RW0408D Series
Operation Table
CS# H L L L L
Note: H:
OE# H L H L
VIH, L: VIL, :
WE# H H L L
VIH or VIL
Mode Standby Output disable
Read Write Write
VCC current ISB, ISB1 ICC ICC ICC ICC
I/O High-Z High-Z DOUT
DIN DIN
Ref. cycle ⎯ ⎯
Read cycle (1) to (3) Write cycle (1) Write cycle (2)
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to VSS
VCC
−0.5 to +4.6
V
Voltage on any pin relative to VSS
VT
−0.5*1 to VCC + 0.5*2
V
Power dissipation
PT
1.0
W
Operating temperature
Topr
0 to +70
C
Storage temperature
Tstg
−55 to +125
C
Storage temperature under bias
Tbias
−10 to +85
C
Notes: 1. VT (min) = −2.0V for pulse width (under shoot) ≤ 6ns. 2. VT (max) = VCC + 2.0V for pulse width (over shoot) ≤ 6ns.
Recommended DC Operating Conditions
Parameter
Symbol
Min
Typ
Supply voltage
VCC*3
3.0
3.3
VSS*4
0
0
Input voltage
VIH
2.0
⎯
VIL
−0.5*1
⎯
Notes: 1. VIL (min) = −2.0V for pulse width (under shoot) ≤ 6ns. 2. VIH (max) = VCC + 2.0V for pulse width (over shoot) ≤ 6ns. 3. The supply voltage with all VCC pins must be on the same level. 4. The supply voltage with all VSS pins must be on the same level.
(Ta = 0 to +70°C)
Max
Unit
3.6
V
0
V
VCC + 0.5*2
V
0.8
V
R10DS0286EJ0100 Rev.1.00 Nov.18.19
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R1RW0408D Series
DC Characteristics
Parameter
Symbol
Min
(Ta = 0 to +70°C, VCC = 3.3V ± 0.3V, VSS = 0V)
Max
Unit
Test conditions
Input leakage current Output leakage current Operating power supply current
Standby power supply current
|ILI|
⎯
2
A
VIN = VSS to VCC
|ILO|
⎯
2
A
VIN = VSS to VCC
ICC
⎯
100
mA Min cycle
CS# = VIL, IOUT = 0mA
Other inputs = VIH/VIL
ISB
⎯
40
mA Min cycle, CS# = VIH,
Other inputs = VIH/VIL
ISB1
⎯
5
⎯*1
0.8*1
Output voltage
VOL
⎯
0.4
VOH
2.4
⎯
Note: 1. This characteristics is guaranteed only for L-version.
mA f = 0MHz VCC CS# VCC − 0.2V,
mA (1) 0V VIN 0.2V or (2) VCC VIN VCC − 0.2V
V
IOL = 8mA
V
IOH = −4mA
Capacitance
Parameter
Symbol
Min
Max
Input capacitance*1
CIN
⎯
6
Input/output capacitance*1
CI/O
⎯
8
Note: 1. This parameter is sampled and not 100% tested.
(Ta = +25C, f = 1.0MHz)
Unit
Test conditions
pF
VIN = 0V
pF
VI/O = 0V
R10DS0286EJ0100 Rev.1.00 Nov.18.19
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R1RW0408D Series
AC Characteristics
Test Conditions (Ta = 0 to +70°C, VCC = 3.3V ± 0.3V, unless otherwise noted.) • Input pulse levels: 3.0V/0.0V • Input rise and fall time: 3ns • Input and output timing reference levels: 1.5V • Output load: See figures (Including scope and jig)
Read Cycle
Parameter Read cycle time Address access time Chip select access time Output enable to output valid Output hold from address change Chip select to output in low-Z Output enable to output in low-Z Chip deselect to output in high-Z Output disable to output in high-Z
Symbol tRC tAA tACS tOE tOH tCLZ tOLZ tCHZ tOHZ
R1RW0408D
Min
Max
12
⎯
⎯
12
⎯
12
⎯
6
3
⎯
3
⎯
0
⎯
⎯
6
⎯
6
Unit
Notes
ns
ns
ns
ns
ns
ns
1
ns
1
ns
1
ns
1
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R1RW0408D Series
Write Cycle
R1RW0408D
Parameter
Symbol
Min
Max
Unit
Notes
Write cycle time
tWC
12
⎯
ns
Address val.