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R1RW0408DGE-2PR Dataheets PDF



Part Number R1RW0408DGE-2PR
Manufacturers Renesas
Logo Renesas
Description 4M High Speed SRAM
Datasheet R1RW0408DGE-2PR DatasheetR1RW0408DGE-2PR Datasheet (PDF)

R1RW0408D Series 4M High Speed SRAM (512-kword × 8-bit) Datasheet R10DS0286EJ0100 Rev.1.00 Nov.18.19 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The .

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R1RW0408D Series 4M High Speed SRAM (512-kword × 8-bit) Datasheet R10DS0286EJ0100 Rev.1.00 Nov.18.19 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408D is packaged in 400-mil 36-pin SOJ for high density surface mounting. Features • Single 3.3V supply: 3.3V ± 0.3V • Access time: 12ns (max) • Completely static memory ⎯ No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible ⎯ All inputs and outputs • Operating current: 100mA (max) • TTL standby current: 40mA (max) • CMOS standby current : 5mA (max) : 0.8mA (max) (L-version) • Data retention current : 0.4mA (max) (L-version) • Data retention voltage: 2.0V (min) (L-version) • Center VCC and VSS type pin out Ordering Information Type No. R1RW0408DGE-2PR R1RW0408DGE-2LR Access time 12ns 12ns Version Normal L-Version Package 400-mil 36-pin plastic SOJ R10DS0286EJ0100 Rev.1.00 Nov.18.19 Page 1 of 11 R1RW0408D Series Pin Arrangement Pin Description A0 to A18 I/O1 to I/O8 CS# OE# WE# VCC VSS NC Pin name Address input Data input/output Chip select Output enable Write enable Power supply Ground No connection Function R10DS0286EJ0100 Rev.1.00 Nov.18.19 Page 2 of 11 R1RW0408D Series Block Diagram R10DS0286EJ0100 Rev.1.00 Nov.18.19 Page 3 of 11 R1RW0408D Series Operation Table CS# H L L L L Note: H: OE#  H L H L VIH, L: VIL, : WE#  H H L L VIH or VIL Mode Standby Output disable Read Write Write VCC current ISB, ISB1 ICC ICC ICC ICC I/O High-Z High-Z DOUT DIN DIN Ref. cycle ⎯ ⎯ Read cycle (1) to (3) Write cycle (1) Write cycle (2) Absolute Maximum Ratings Parameter Symbol Value Unit Supply voltage relative to VSS VCC −0.5 to +4.6 V Voltage on any pin relative to VSS VT −0.5*1 to VCC + 0.5*2 V Power dissipation PT 1.0 W Operating temperature Topr 0 to +70 C Storage temperature Tstg −55 to +125 C Storage temperature under bias Tbias −10 to +85 C Notes: 1. VT (min) = −2.0V for pulse width (under shoot) ≤ 6ns. 2. VT (max) = VCC + 2.0V for pulse width (over shoot) ≤ 6ns. Recommended DC Operating Conditions Parameter Symbol Min Typ Supply voltage VCC*3 3.0 3.3 VSS*4 0 0 Input voltage VIH 2.0 ⎯ VIL −0.5*1 ⎯ Notes: 1. VIL (min) = −2.0V for pulse width (under shoot) ≤ 6ns. 2. VIH (max) = VCC + 2.0V for pulse width (over shoot) ≤ 6ns. 3. The supply voltage with all VCC pins must be on the same level. 4. The supply voltage with all VSS pins must be on the same level. (Ta = 0 to +70°C) Max Unit 3.6 V 0 V VCC + 0.5*2 V 0.8 V R10DS0286EJ0100 Rev.1.00 Nov.18.19 Page 4 of 11 R1RW0408D Series DC Characteristics Parameter Symbol Min (Ta = 0 to +70°C, VCC = 3.3V ± 0.3V, VSS = 0V) Max Unit Test conditions Input leakage current Output leakage current Operating power supply current Standby power supply current |ILI| ⎯ 2 A VIN = VSS to VCC |ILO| ⎯ 2 A VIN = VSS to VCC ICC ⎯ 100 mA Min cycle CS# = VIL, IOUT = 0mA Other inputs = VIH/VIL ISB ⎯ 40 mA Min cycle, CS# = VIH, Other inputs = VIH/VIL ISB1 ⎯ 5 ⎯*1 0.8*1 Output voltage VOL ⎯ 0.4 VOH 2.4 ⎯ Note: 1. This characteristics is guaranteed only for L-version. mA f = 0MHz VCC  CS#  VCC − 0.2V, mA (1) 0V  VIN  0.2V or (2) VCC  VIN  VCC − 0.2V V IOL = 8mA V IOH = −4mA Capacitance Parameter Symbol Min Max Input capacitance*1 CIN ⎯ 6 Input/output capacitance*1 CI/O ⎯ 8 Note: 1. This parameter is sampled and not 100% tested. (Ta = +25C, f = 1.0MHz) Unit Test conditions pF VIN = 0V pF VI/O = 0V R10DS0286EJ0100 Rev.1.00 Nov.18.19 Page 5 of 11 R1RW0408D Series AC Characteristics Test Conditions (Ta = 0 to +70°C, VCC = 3.3V ± 0.3V, unless otherwise noted.) • Input pulse levels: 3.0V/0.0V • Input rise and fall time: 3ns • Input and output timing reference levels: 1.5V • Output load: See figures (Including scope and jig) Read Cycle Parameter Read cycle time Address access time Chip select access time Output enable to output valid Output hold from address change Chip select to output in low-Z Output enable to output in low-Z Chip deselect to output in high-Z Output disable to output in high-Z Symbol tRC tAA tACS tOE tOH tCLZ tOLZ tCHZ tOHZ R1RW0408D Min Max 12 ⎯ ⎯ 12 ⎯ 12 ⎯ 6 3 ⎯ 3 ⎯ 0 ⎯ ⎯ 6 ⎯ 6 Unit Notes ns ns ns ns ns ns 1 ns 1 ns 1 ns 1 R10DS0286EJ0100 Rev.1.00 Nov.18.19 Page 6 of 11 R1RW0408D Series Write Cycle R1RW0408D Parameter Symbol Min Max Unit Notes Write cycle time tWC 12 ⎯ ns Address val.


R1RW0408D R1RW0408DGE-2PR R1RW0408DGE-2LR


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