AS6C1016

AS6C1016 64K X 16 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Revised PACKAGE OUTLINE DIMENSION in page 11 Revised VDR to 1.5V Revised ORDERING INFORMATION in page 12 Revised typo in PRODUCT FAMILY page 1 Deleted E Grade Issue Date Nov.19.2008 May.6.2010 Rev. 1.2 Rev. 1.3 Rev. 1.4 Aug.30.2010 Oct.4.2010 Aug.9.2011 Alliance Memory, Inc. Rev. 1.4 0 AS6C1016 64K X 16 BIT LOW POWER CMOS SRAM FEATURES  Fast access time : 55ns  Low power consumption: Operating current : 20mA (TYP.) Standby current : 2A (TYP.)  Single 2.7V ~ 5.5V power supply  All outputs TTL compatible  Fully static operation  Tri-state output  Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15)  Data retention voltage : 1.5V (MIN.)  Green package available  Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA GENERAL DESCRIPTION The AS6C1016 is a 1,048,576-bit low power CMOS static random access memory organized as 65,536 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C1016 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The AS6C1016 operates from a s...