AS6C2008A

AUGUST 2007 January 2007 AS6C2008A 512K X8 BIT SRAM LOW POWER CMOS SRAM 256K X 8 BIT LOW POWER CMOS FEATURES Fast access time : 55ns Low power consumption: Operating current : 20/18mA (TYP.) Standby current : 2µA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation Tri-state output Data retention voltage : 2.0V (MIN.) Lead free and green package available Package : 32-pin 8mm x 20mm TSOP-I 32-pin 8mm x 13.4mm STSOP 32-pin 450 mil SOP 32-pin 600 mil P-DIP 36-ball 6mm x 8mm TFBGA GENERAL DESCRIPTION The AS6C2008A is a 2,097,152-bit low power CMOS static random access memory organized as 262,144 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C2008A is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The AS6C2008A operates from a single power supply of 2.7V ~ 5.5V and all outputs are fully TTL compatible PRODUCT FAMILY Product Family AS6C2008A(LLI) Operating Temperature -40 ~ 85℃ Vcc Range 2.7 ~ 5.5V Speed 55ns Power Dissipation Standby(ISB1,TYP.) Operating(Icc,TYP.) 2µA(LL) 20/18mA FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION SYMBOL DESCRIPTION Address Inputs Data Inputs/Outputs Chip Enable Inputs Write Enable Input Output Enable Input Power Supply Ground No Connection Vcc Vss A0 - A17 DQ0 – DQ7 DECODER 256Kx8 MEMORY ARRAY CE#...