1024K X 8 BIT SUPER LOW POWER CMOS SRAM
JANUARY 2008 January 2007
AS6C8008
X 8 BITCMOS LOW SRAM POWER CMOS SRAM 1024K X 8 BIT SUPER 512K LOW POWER
FEATURES
Fa...
Description
JANUARY 2008 January 2007
AS6C8008
X 8 BITCMOS LOW SRAM POWER CMOS SRAM 1024K X 8 BIT SUPER 512K LOW POWER
FEATURES
Fast access time : 55ns Low power consumption: Operating current : 30mA (TYP.) Standby current : 6µA (TYP.) LL-version Single 2.7V ~ 5.5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data retention voltage : 1.5V (MIN.) Lead free and green package available Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA
GENERAL DESCRIPTION
The AS6C8008 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C8008 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The AS6C8008 operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible
PRODUCT FAMILY
Product Family AS6C8008(I) Operating Temperature -40 ~ 85℃ Vcc Range 2.7 ~ 5.5V Speed 55ns Power Dissipation Standby(ISB1,TYP.) Operating(Icc,TYP.) 6µA(LL) 30mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL DESCRIPTION Address Inputs Data Inputs/Outputs Chip Enable Inputs Write Enable Input Output Enable Input Power Supply Ground No Connection A0 - A19 DQ0 – DQ7 CE#, CE2 WE# OE# VCC VSS NC
Vcc Vss
A0-A19
DECODER
1024K x8 MEMORY R ARAY
D...
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