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HB56SW3272ESK-5

Hitachi Semiconductor

256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)

HB56SW3272ESK-5/6 256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 component...


Hitachi Semiconductor

HB56SW3272ESK-5

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Description
HB56SW3272ESK-5/6 256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components) ADE-203-872B (Z) Rev. 1.0 June 23, 1998 Description The HB56SW3272ESK belong to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor applications. The HB56SW3272ESK is 32 M × 72 Dynamic RAM Module, mounted 36 pieces of 64-Mbit DRAM (HM5165405) sealed in TCP package and 2 pieces of 16-bit BiCMOS line driver sealed in TSSOP package. The HB56SW3272ESK offer Extended Data Out (EDO) Page Mode as a high speed access mode. An outline of the HB56SW3272ESK are 168-pin socket type package (dual lead out). Therefore, the HB56SW3272ESK make high density mounting possible without surface mount technology. The HB56SW3272ESK provide common data inputs and outputs. Decoupling capacitors are mounted beside each TCP on its module board. Note: Do not push the cover or drop the modules in order to protect from mechanical defects, which would be electrical defects. Features 168-pin socket type package (Dual lead out)  Lead pitch : 1.27 mm Single 3.3 V supply (±0.3 V) High speed  Access time: tRAC = 50 ns/60 ns (max)  Access time: tCAC = 18 ns/20 ns (max) Low power dissipation  Active mode: 8.78 W/7.49 W (max)  Standby mode (TTL): 295.2 mW (max) JEDEC standard outline buffered 8-byte DIMM Buffered input except RAS and DQ HB56SW3272ESK-5/6 4-byte interleave enabled, dua...




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