D1272

Power Transistors 2SD1272 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 200 150 6 2.5 1 0.1 40 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 1.4±0.1 1.3±0.2 Solder Dip 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency (TC=25˚C) Symbol ICBO IEBO VCEO hFE* VCE(sat) fT Conditions VCB = 200V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.2A IC = 0.5A, IB = 0.02A VCE = 4V, IC = 0.1A, f = 10MHz 25 150 500 2000 1 V MHz min typ max 100 100 Unit µA µA V *h FE Rank classification Q P Rank hFE 500 to 1200 800 to 2000 1 Power Transistors PC — Ta 50 ...