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HBC327

Hi-Sincerity Mocroelectronics

PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY MICROELECTRONICS CORP. HBC327 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6413 Issued Date : 1993.01.15 ...


Hi-Sincerity Mocroelectronics

HBC327

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Description
HI-SINCERITY MICROELECTRONICS CORP. HBC327 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6413 Issued Date : 1993.01.15 Revised Date : 2005.01.25 Page No. : 1/5 Description This HBC327 is designed for driver and output-stages of audio amplifiers. Features High DC Current Gain: 100-600 at IC=100mA,VCE=1V Complementary to HBC337 TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage .................................




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