HI-SINCERITY
MICROELECTRONICS CORP.
HBC327
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6413 Issued Date : 1993.01.15 ...
HI-SINCERITY
MICROELECTRONICS CORP.
HBC327
PNP EPITAXIAL PLANAR
TRANSISTOR
Spec. No. : HE6413 Issued Date : 1993.01.15 Revised Date : 2005.01.25 Page No. : 1/5
Description
This HBC327 is designed for driver and output-stages of audio amplifiers.
Features
High DC Current Gain: 100-600 at IC=100mA,VCE=1V Complementary to HBC337
TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage .................................