HI-SINCERITY
MICROELECTRONICS CORP.
HBC547
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6418 Issued Date : 1992.11.25 ...
HI-SINCERITY
MICROELECTRONICS CORP.
HBC547
NPN EPITAXIAL PLANAR
TRANSISTOR
Spec. No. : HE6418 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page No. : 1/5
Description
The HBC547 is designed for use in driver stage of audio amplifier.
Features
High Breakdown Voltage: 45V High DC Current Gain: 110-800 at IC=2mA
TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage .............................................