RFVS8TG6S

Super Fast Recovery Diode RFVS8TG6S lSerise Standard Fast Recovery 2.7±0.1 Data Sheet lDimensions (Unit : mm) f3.8±0.06 10.2±0.2 1.28±0.06 6.0±0.15 4.5±0.1 lStructure lApplication General rectification For PFC (CCM : Continuous Current Mode) lFeatures 1) Hyper fast recovery / Hard recovery type 3) High current overload capacity lConstruction Silicon epitaxial planar type 16.4±0.15 4.05±0.15 28.56 1 2 9.05 RFVS8 TG6S 15.05±0.15 Cathode Anode 2.6±0.1 1.4±0.2 13.51 9.46 2) Ultra low switching loss 0.6±0.1 2.54±0.1 0.83±0.06 0.10 5.08±0.1 ROHM : TO-220AC 1 : Manufacture year, week,day, package code 2 : Serial number lAbsolute Maximum Ratings (Ta= 25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average current Non-repetitive forward surge current Symbol VRM VR Io IFSM Tj Tstg Conditions Duty≦0.5 Direct reverse voltage 60Hz half sin wave , resistive load 60Hz half sin wave, one cycle, non-repetitive at T j=25°C Limits 600 600 8 60 150 -55 to +150 Unit V V A A °C °C Operating junction temperature Storage temperature - lElectrical Characteristics (Tj = 25°C) Parameter Forward voltage Reverse current Reverse recovery time Reverse recovery current Reverse recovery charges Forward recovery time Forward recovery voltage Thermal resistance Symbol VF IR trr IRp Qrr tfr VFp Rth(j-a) Rth(j-c) Conditions IF=8A VR=600V Tj=25°C Tj=125°C Tj=25°C Tj=125°C Min. 1.6 - Typ. Max. Unit 2.5 1.8 0.03 5 12 20 5.0 145 110 4.5 3.0 10 200 20 40 3.0 1.8 V V mA mA n...