Nch 30V 15A Power MOSFET
RQ3E070BN
Nch 30V 15A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
30V 27mΩ ±15A 13W
lFeatures
1) Low on - r...
Description
RQ3E070BN
Nch 30V 15A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
30V 27mΩ ±15A 13W
lFeatures
1) Low on - resistance 2) High Power Package (HSMT8) 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free 5) 100% Rg and UIS tested
lOutline
HSMT8
lInner circuit
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
330
lApplication Switching
Type Tape width (mm) Quantity (pcs)
12 3000
Taping code
TB
Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
E070BN
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
30 V
Continuous drain current
Tc = 25°C Ta = 25°C
ID*1 ID
±15 A ±7 A
Pulsed drain current
IDP*2 ±28 A
Gate - Source voltage
VGSS
±20 V
Avalanche current, single pulse
IAS*3 9.0 A
Avalanche energy, single pulse
EAS*3
4.0 mJ
Power dissipation
PD*1 13 W PD*4 2.0 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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20190527 - Rev.003
RQ3E070BN
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient
Datasheet
Symbol
RthJC*1 RthJA*4
Values Min. Typ. Max.
- - 9.6 - - 62.5
Unit
℃/W ℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source break...
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