HBC557

HI-SINCERITY MICROELECTRONICS CORP. HBC557 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6423 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page No. : 1/4 Description The HBC557 is designed for use in driver stage of audio amplifier applications. Features High Breakdown Voltage: 45V High AC Current Gain: 75-800 at IC=2mA TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 500 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage .................................