HBC558

HI-SINCERITY MICROELECTRONICS CORP. HBC558 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HA200104 Issued Date : 2001.10.01 Revised Date : 2004.07.16 Page No. : 1/4 Description The HBC558 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Absolute Maximum Ratings TO-92 Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................................................................... +150 °C Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 500 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage .....................................................