HBC807

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2005.04.18 Page No. : 1/4 HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages. Feature Collector current capability IC=-800mA Collector-emitter voltage VCEO(max)=-45V General purpose switching and amplification NPN complement: HBC817 series Pb-Free Package is available SOT-23 Absolute Maximum Ratings Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Total Device Dissipation (TA=25oC) Total Device Dissipation (Dreate above 25oC) Thermal Resistance, Junction to Ambient Symbol VCEO VCBO VEBO IC PD RθJA Value (Max.) -45 -50 -5 -800 225 1.8 556 Unit V V V mA mW mW/oC oC/W Electrical Characteristics (TA=25°C, unless otherwise noted.) Characteristic Collector-Emitter Breakdown Voltage ...