Document
PRELIMINARY
SRAM
AS5LC256K16
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
FEATURES
• High-speed access time: 10, 15 & 20ns • Available in Mil-Temp*, Enhanced & Industrial Ranges • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply: VDD = 3.3V ± 5% • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes •TSOPII in copper lead frame for superior thermal performance • RoHs compliant options available *Consult factory for /XT product.
PIN CONFIGURATIONS 44-pin TSOPII
A0 A1 A2 A3 A4 CE I/O0 I/O1 I/O2 I/O3 VDD GND I/O4 I/O5 I/O6 I/O7 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A17 A16 A15 OE UB LB I/O15 I/O14 I/O13 I/O12 GND VDD I/O11 I/O10 I/O9 I/O8 NC A14 A13 A12 A11 A10
FUNCTIONAL BLOCK DIAGRAM
A0-A17
DECODER
256K x 16 MEMORY ARRAY
A0ͲA17 I/OoͲI/O15 CE\ OE\ WE\ LB\ UB\ NC VDD GND
AddressInputs DataInputs/Outputs ChipEnableInput OutputEnableInput WriteEnableInput LowerͲbyteControl(I/O0ͲI/O7) UpperͲbyteControl(I/O8ͲI/O15) NoConnection Power Ground
VDD GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT
GENERAL DESCRIPTION
COLUMN I/O
CE OE WE UB LB CONTROL CIRCUIT
The Micross AS5LC256K16 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using Micross’ high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE\ is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE\ and OE\. The active LOW Write Enable (WE\) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The AS5LC256K16 is packaged in JEDEC standard 44-pin TSOPII in copper lead frame for superior thermal performance. RoHs compliant options are available.
For more products and information please visit our web site at www.micross.com
AS5LC256K16 Rev. 0.1 09/11
Micross Components reserves the right to change products or specifications without notice.
1
PRELIMINARY
SRAM
AS5LC256K16
TRUTH TABLE
Mode NotSelected OutputDisabled WE\ X H X H H H L Write L L CE\ H L L L L L L L L OE\ X H X L L L X X X LB\ X X H L H L L H L UB\ X X H H L L H L L I/OPIN VDDCurrent I/O0ͲI/O7 I/O8ͲI/O15 ISB1,ISB2 HighͲZ HighͲZ HighͲZ HighͲZ ICC HighͲZ HighͲZ DOUT HighͲZ ICC DOUT HighͲZ DOUT DIN HighͲZ DIN DOUT HighͲZ DIN DIN ICC
Read
DC ELECTRICAL CHARACTERISTICS (Over Operating Range) VDD = 3.3V ± 5%
Symbol VOH VOL VIH VIL ILI ILO Parameter OutputHIGHVoltage OutputLOWVoltage InputHIGHVoltage InputLOWVoltage InputLeakage OutputLeakage GNDчVINчVDD GNDчVOUTчVDD,OutputsDisabled TestConditions VDD=Min.,IOH=–4.0mA VDD=Min.,IOL=8.0mA Min 2.4 Ͳ 2 Ͳ0.3 Ͳ1 Ͳ1 Max Ͳ 0.4 VDD+0.3 0.8 1 1 Unit V V V V μA μA
Note: 1.VIL(min.)=–0.3VDC;Vil(min.)=–2.0VAC(pulsewidth<10ns).Not100%tested. VIH(max.)=VDD+0.3VDC;VIH(max.)=VDD+2.0VAC(pulsewidth<10ns).Not100%tested.
THERMAL RESISTANCE
Parameter ȺJA ȺJC Description ThermalResistance (JunctiontoAmbient) ThermalResistance (JunctiontoCase) TestConditions Testconditionsfollowstandardtest methodsandproceduresfor measuringthermalimpedance,per EIA/JESD51 44TSOPII 51.4 9.64 Unit
o
C/W C/W
o
AS5LC256K16 Rev. 0.1 09/11
Micross Components reserves the right to change products or specifications without notice.
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PRELIMINARY
SRAM
AS5LC256K16
AC TEST CONDITIONS
Parameter InputPulseLevel InputRiseandFallTimes InputandOutputTimingand ReferenceLevel(VREF) OutputLoad VDD=3.3V±5% 0Vto3V 1V/ns 1.5V SeeFigures1&2
AC TEST LOADS
319 Ω
ZO = 50Ω OUTPUT
50Ω 1.5V 30 pF Including jig and scope
3.3V
OUTPUT 5 pF Including jig and scope 353 Ω
Figure 1.
Figure 2.
ABSOLUTE MAXIMUM RATINGS1
Symbol VTERM VDD TSTG PT
Notes:
1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamagetothe device.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditionsabove thoseindicatedintheoperationalsectionsofthisspecificationisnotimplied.Exposuretoabsolutemaximumrating conditionsforextendedperiodsmayaffectreliability.
Parameter TerminalVoltagewithRespecttoGND VDDRelatestoGND StorageTemperature PowerDissipation
Value –0.5toVDD+0.5 Ͳ0.3to4.0 Ͳ65to+150 1.0
Unit V
o
V C
W
AS5LC256K16 Rev. 0.1 09/11
Micross Components reserves the right to change products or specifications without notice.
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PRELIMINARY
SRAM
AS5LC256K16
CAPACITANCE1,2
Symbol CIN CI/O Parameter InputCapacitance Input/Outp.