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MT48H8M32LF Dataheets PDF



Part Number MT48H8M32LF
Manufacturers Micron Technology
Logo Micron Technology
Description MOBILE SDRAM
Datasheet MT48H8M32LF DatasheetMT48H8M32LF Datasheet (PDF)

256Mb: x32 Mobile SDRAM Features Mobile SDRAM MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF - 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile Features • • • • • • • • • • • • • • • Low voltage power supply Partial array self refresh power-saving mode Temperature Compensated Self Refresh (TCSR) Deep power-down mode Programmable output drive strength Fully synchronous; all signals registered on positive edge of system clock Internal pipeli.

  MT48H8M32LF   MT48H8M32LF



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256Mb: x32 Mobile SDRAM Features Mobile SDRAM MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF - 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile Features • • • • • • • • • • • • • • • Low voltage power supply Partial array self refresh power-saving mode Temperature Compensated Self Refresh (TCSR) Deep power-down mode Programmable output drive strength Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access/precharge Programmable burst lengths: 1, 2, 4, 8, or full page Auto precharge, includes concurrent auto precharge, and auto refresh modes Self-refresh mode; standard and low power 64ms, 4,096-cycle refresh LVTTL-compatible inputs and outputs Commercial and industrial temperature ranges Supports CAS latency of 1, 2, 3 Options • VDD/VDDQ • 3.3V/3.3V • 2.5V/2.5V • 1.8V/1.8V • Configurations • 8 Meg x 32 (2 Meg x 32 x 4 banks) • Package/Ballout • 90-ball VFBGA (8mm x 13mm) (Standard) • 90-ball VFBGA (8mm x 13mm) (Lead-free) • Timing (Cycle Time) • 7.5ns @ CL = 3 (133 MHz) • 7.5ns @ CL = 2 (104 MHz) • 8ns @ CL = 3 (125 MHz) • 8ns @ CL = 2 (104 Mhz) • 10ns @ CL = 3 (100 MHz) • 10ns @ CL = 2 (83 Mhz) • Operating Temperature Range • Commercial (0° to +70°C) • Industrial (-40°C to +85°C) Marking LC V H 8M32 F5 B5 -75 -75 -8 -8 -10 -10 None IT Table 1: Addressing 8 Meg x 32 Configuration Refresh Count Row Addressing Bank Addressing Column Addressing 2 Meg x 32 x 4 banks 4K 4K (A0–A11) 4 (BA0, BA1) 512 (A0–A8) Table 2: Key Timing Parameters CL = CAS (READ) latency Speed Grade -75 -8 -10 -75 -8 -10 Clock Frequency 133 MHz 125 MHz 100 MHz 133 MHz 104 MHz 83 MHz Access Time CL = 2 – – – 7ns 8ns 8ns CL = 3 6ns 7ns 7ns – – Setup Time 2.5ns 2.5ns 2.5ns 2.5ns 2.5ns 2.5ns Hold Time 1ns 1ns 1ns 1ns 1ns 1ns PDF: 09005aef80d460f2/Source: 09005aef80cd8d41 256Mb SDRAM x32_1.fm - Rev. G 6/05 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 256Mb: x32 Mobile SDRAM Table of Contents Table of Contents Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 FBGA Part Number System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Ball Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


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