MT48LC8M32LFB5-8

256Mb: x32 Mobile SDRAM Features Mobile SDRAM MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF - 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile Features Low voltage power supply Partial array self refresh power-saving mode Temperature Compensated Self Refresh (TCSR) Deep power-down mode Programmable output drive strength Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access/precharge Programmable burst lengths: 1, 2, 4, 8, or full page Auto precharge, includes concurrent auto precharge, and auto refresh modes Self-refresh mode; standard and low power 64ms, 4,096-cycle refresh LVTTL-compatible inputs and outputs Commercial and industrial temperature ranges Supports CAS latency of 1, 2, 3 Options VDD/VDDQ 3.3V/3.3V 2.5V/2.5V 1.8V/1.8V Configurations 8 Meg x 32 (2 Meg x 32 x 4 banks) Package/Ballout 90-ball VFBGA (8mm x 13mm) (Standard) 90-ball VFBGA (8mm x 13mm) (Lead-free) Timing (Cycle Time) 7.5ns @ CL = 3 (133 MHz) 7.5ns @ CL = 2 (104 MHz) 8ns @ CL = 3 (125 MHz) 8ns @ CL = 2 (104 Mhz) 10ns @ CL = 3 (100 MHz) 10ns @ CL = 2 (83 Mhz) Operating Temperature Range Commercial (0° to +70°C) Industrial (-40°C to +85°C) Marking LC V H 8M32 F5 B5 -75 -75 -8 -8 -10 -10 None IT Table 1: Addressing 8 Meg x 32 Configuration Refre...