HBC858

HI-SINCERITY MICROELECTRONICS CORP. HBC858 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6851 Issued Date : 1994.09.02 Revised Date : 2004.09.01 Page No. : 1/4 Description The HBC858 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Absolute Maximum Ratings SOT-23 Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................................................................... +150 °C Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 225 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ......................................................