H57V2622GMR-60X

www.DataSheet4U.com 256Mb : x32 Dual Die Synchronous DRAM 256M (8Mx32bit) Hynix SDRAM Memory This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Oct. 2009 1 www.DataSheet4U.com 111 Synchronous DRAM Memory 256Mbit H57V2622GMR Series Document Title 256Mbit (8M x32) Synchronous DRAM Revision History Revision No. 0.1 1.0 History Initial Draft Release Draft Date Sep. 2009 Oct. 2009 Remark Preliminary Rev 1.0 / Oct. 2009 2 www.DataSheet4U.com 111 Synchronous DRAM Memory 256Mbit H57V2622GMR Series DESCRIPTION The Hynix H57V2622GMR Synchronous DRAM (Dual Die) ideally suited for the consumer memory applications which requires large memory density and high bandwidth uses Hinix’s 128Mb SDR monolithic die and has similar functionality. Synchronous DRAM is a type of DRAM which operates in synchronization with input clock. The Hynix Synchronous DRAM latch each control signal at the rising edge of a basic input clock (CLK) and input/output data in synchronization with the input clock (CLK). The address lines are multiplexed with the Data Input/ Output signals on a multiplexed x32 Input/ Output bus. All the commands are latched in synchronization with the rising edge of CLK. The Synchronous DRAM provides for programmable read or write Burst length of Programmable burst lengths: 1, 2, 4, 8 locations or full page. An AUTO PRECHARGE...