512Mb DDR SDRAM
NT5DS64M8DS N2DS51216DS
512Mb DDR SDRAM
Preliminary
Feature
CAS Latency Frequency
DDR-333 DDR400
2KB page size for...
Description
NT5DS64M8DS N2DS51216DS
512Mb DDR SDRAM
Preliminary
Feature
CAS Latency Frequency
DDR-333 DDR400
2KB page size for all configurations.
Units
Speed Sorts
-6K CL-tRCD-tRP -5T
DQS is edge-aligned with data for reads and is center-aligned with data for WRITEs
2.5-3-3 266 333 333
3-3-3 266 333 400
tCK
CL=2 Speed CL=2.5 CL=3
Differential clock inputs (CK and )
Mbps
Data mask (DM) for write data DLL aligns DQ and DQS transition with CK transitions. Commands entered on each positive CK edge; data
Power Supply Voltage: VDD=VDDQ=2.5V±0.2V (DDR-333) VDD=VDDQ=2.6V±0.1V (DDR-400/500)
and data mask referenced to both edges of DQS Burst Lengths: 2, 4 or 8 Auto Pre-charge option for each burst access Auto-Refresh and Self-Refresh Mode 7.8 µs max. Average Periodic Refresh Interval 2.5V (SSTL_2 compatible) I/O RoHS and Halogen-Free compliance Packages: 66 pin TSOPII
4 internal memory banks for concurrent operation. CAS Latency: 2, 2.5 and 3 Double Data Rate Architecture Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver.
Commercial grade device support 0℃~70℃ Operating Temperature (-6K/5T)
1
REV 0.1 11/2012
NT5DS64M8DS N2DS51216DS
512Mb DDR SDRAM
Preliminary
Description
Elixir 512Mb SDRAMs is a high-speed CMOS Double Data Rate SDRAM containing 536,870,912 bits. It is internally configured as a qual-bank DRAM. The 512Mb chip is organized as 16Mbit x 8 I/O x 4 bank or...
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