C2130

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC2130 TRANSISTOR (NPN) 1. EMITTER FEATURES z High DC Current Gain 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 45 40 5 0.8 600 208 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE Cob fT Test conditions Min 45 40 5 0.1 0.1 0.1 100 320 0.5 0.8 13 100 V V pF MHz Typ Max Unit V V V μA μA μA IC= 0.1mA,IE=0 IC=10mA,IB=0 IE=0.1mA,IC=0 VCB=35V,IE=0 VCE=25V,IB=0 VEB=5V,IC=0 VCE=1V, IC=100mA IC=500mA,IB=20mA VCE=1V, IC=10mA VCB=10V,IE=0, f=1MHz VCE=5V,IC=10mA CLASSIFICATION OF hFE RANK RANGE O 100-200 Y 160-320 B,Mar,2012 Typical Characteristics 150 2SC2130 hFE —— IC VCE= 1V Ta=100 C o Static Characteristic 500uA COMMON EMITTER Ta=25℃ 400uA hFE DC CURRENT GAIN 300uA 250uA 200uA ...