IRF3305PBF

PD - 95758 AUTOMOTIVE MOSFET Features O IRF3305PbF HEXFET® Power MOSFET D O O O O O Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated Lead-Free VDSS = 55V G S RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for use in linear automotive applications this HEXFET Power MOSFET utilizes a rugged planar process technology and device design, which greatly improves the Safe Operating Area (SOA) of the device. These features, coupled with 175°C junction operating temperature and low thermal resistance of 0.45C/W make the IRF3305 an ideal device for linear automotive applications. Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM TO-220AB Max. 140 99 75 560 330 2.2 ± 20 W W/°C V mJ A mJ -55 to + 175 °C 300 (1.6mm from case ) 10 lbf in (1.1N m) A Units ™ PD @TC = 25°C Power Dissipation VGS Linear Derating Factor Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value EAS (Tested ) IAR EAR TJ TSTG Avalanche Current d Ù h 470 860 See Fig.12a, 12b, 15, 16 Repetitive Avalanche Energy Operating Junction and Storage Temperature Range g Soldering Temperature, for 10 seconds Moun...