AO4498E

AO4498E 30V N-Channel MOSFET General Description The AO4498E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 18A < 5.8mΩ < 8.5mΩ ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D D G G S S S S Bottom View D Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C C TA=25° Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25° C TA=70° C VGS ID IDM PD TJ, TSTG Maximum 30 ±20 18 14 120 3.1 2 -55 to 150 Units V V A W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units ° C/W ° C/W ° C/W Rev 1: November 2009 www.aosmd.com Page 1 of 5 AO4498E Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=18A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=16A Forward Transconductance Diode Forward Voltage VDS=5V, ID=18A IS=1A,VGS=0V TJ=125° C 1.3 120 4.8 7.4 6.8 50 0.7 1 4 1840 VGS=0V, VDS=15V, f=1MHz VGS=0...