3DG102

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG100, 3DG102 NPN Silicon High Frequency Low Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA: Specifications Parameter name Total Dissipation Max. Collector Current Junction Temperature Storage Temperature C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Symbols Unit A B 3DG100 C D A 3DG102 B C D (Ta = 25°C ) Ptot ICM Tjm Tstg mW mA °C °C 30 20 100 (Ta=25°C) 20 175 -55~+175 40 30 30 20 40 30 30 15 100 (Ta=25°C) 20 V(BR)CBO V V(BR)CEO V V V V uA uA uA 40 20 30 20 40 30 IC=0.1mA IC=0.1mA V(BR)EBO C- Emitter Saturation Voltage Drop VCE(sat) B- E Saturation Voltage Drop VBE(sat) C-B Leakage Current ICBO C-E Leakage Current ICEO E-B Leakage Current IEBO DC Current Gain hFE Transition frequency ≥4 (IE=0.1 mA ) 1.0 (IC=10mA, IB=1mA) 0.35(IC=10mA, IB=1mA) 1.0 (IC=10mA, IB=1mA) 1.0 (IC=10mA, IB=1mA) 0.01(VCB=10V) 0.01(VCB=10V) 0.01(VCE=10V) 0.01(VCE=10V) 0.01(VEB=1.5V) 0.01(VEB=1.5V) 25~270 (VCE=10V, IC=3mA) fT MHz 300 VCE=10V, IC=3mA, f=100MHz 150 150 300 150 700 VCE=10V, IC=3mA, f=100MHz 150 700 hFE Colored: Color Orange 25~40 Yellow 40~55 Green 55~80 ...