K439

2SK439 Silicon N-Channel MOS FET Application VHF amplifier Outline SPAK 1 23 1. Gate 2. Source 3. Drain 2SK439 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VDS VGSS ID IG Pch Tch Tstg Ratings 20 ±5 30 ±1 300 150 –55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Power gain Noise figure Note: Grade I DSS D 4 to 8 E 6 to 10 Symbol V(BR)DSX I GSS I DSS* 1 Min 20 — 4 0 8 — — — — — F 8 to 12 Typ — — — — 14 2.5 0.03 1.8 30 2.0 Max — ±20 12 –2.0 — — — — — — Unit V nA mA V mS pF pF pF dB dB Test conditions I D = 100 µA, VGS = –4 V VGS = ±5 V, VDS = 0 VDS = 10 V, VGS = 0 VDS = 10 V, ID = 10 µA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VGS(off) y fs Ciss Crss Coss PG NF VDS = 5 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 100 MHz 1. The 2SK439 is grouped by I DSS as follows. See characteristic curves of 2SK359. 2 2SK439 Maximum Channel Dissipation Curve Channel Power Dissipation Pch (mW) 300 200 100 0 50 100 150 Ambient Temperature Ta (°C) 3 4.2 Max 1.8 Max 3.2 Max 2.2 Max Unit: mm 0.45 ± 0.1 14.5 Min 0.6 0.6 Max 0.4 ± 0.1 1.27 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (ref...