MT42L128M16D1

2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V – VDDCA/VDDQ = 1.14–1.30V – VDD1 = 1.70–1.95V Clock frequency range – 533–10 MHz (data rate range: 1066–20 Mb/s/pin) Four-bit prefetch DDR architecture Eight internal banks for concurrent operation Multiplexed, double data rate, command/address inputs; commands entered on every CK edge Bidirectional/differential data strobe per byte of data (DQS/DQS#) Programmable READ and WRITE latencies (RL/WL) Programmable burst lengths: 4, 8, or 16 Per-bank refresh for concurrent operation On-chip temperature sensor to control self refresh rate Partial-array self refresh (PASR) Deep power-down mode (DPD) Selectable output drive strength (DS) Clock stop capability RoHS-compliant, “green” packaging Table 1: Key Timing Parameters Speed Grade -182 -25 -3 Clock Rate (MHz) 533 400 333 Data Rate (Mb/s/pin) RL WL 1066 800 667 8 6 5 4 3 2 Options VDD2: 1.2V Configuration – 16 Meg x 16 x 8 banks x 1 die – 8 Meg x 32 x 8 banks x 1 die – 8 Meg x 32 x 8 banks x 2 die – 16 Meg x 16 x 8 banks x 4 die – 8 Meg x 32 x 8 banks x 2 die – 8 Meg x 32 x 8 banks x 3 die – 8 Meg x 32 x 8 banks x 4 die – 16 Meg x 16 x 8 banks x 2 die + 8 Meg x 32 x 8 banks x 1 die Device type – LPDDR2-S4, 1 die in package – LPDDR2-S4, 2 die i...