STM4884

Gre r Pro STM4884 Ver 3.2 SamHop Micrpelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ID 13A RDS(ON) (m ) Typ 5.5 @VGS=10V 8.5 @VGS=4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VDGR VGS ID IDM EAS I AR PD TJ, TSTG Parameter Drain-Source Voltage Drain-Gate Voltage (RGS = 20 kΩ) Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Current Maximum Power Dissipation a b d a Limit 30 30 ±20 TA=25°C TA=70°C 13 10.5 52 45 13 TA=25°C TA=70°C 2.5 1.6 -55 to 150 Units V V V A A A mJ A W W °C Sigle Pulse Avalanche Energy Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 °C/W Details are subject to change without notice. Mar,02,2011 1 www.samhop.com.tw STM4884 Ver 3.2 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage BVDSX IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current ID=10mA , VGS=0V ID=10mA , VGS=-20V VDS=24V , VGS=0V 30 10 1 ±100 V V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=1mA VGS=10V , ID=6....