STM4470A

STM4470A SamHop Microelectronics Corp. May, 10 2007 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 40V F E AT UR E S S uper high dense cell design for low R DS (ON ). ID 10A RDS(ON) ( m ı Ω ) Max 10.5 @ VGS = 10V 13.5 @ VGS = 4.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TJ=25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 40 20 10 39 1.7 2.5 -55 to 150 Unit V V A A A W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 1 50 C /W STM4470A ELECTRICAL CHARACTERISTICS (TA= 25 C unless otherwise noted) Parameter 5 Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS c Condition VGS =0V, ID = 250uA VDS=32V, VGS = 0V VGS = 20V, VDS =0V VDS = VGS, ID = 250uA VGS= 10V, ID = 10A VGS = 4.5V, ID = 6A VDS = 10V, VGS = 10V VDS = 10V, ID =10A Min Typ C Max Unit 40 1 10 1 1.8 9 11.5 20 23 1200 230 150 19 20 62 15 22 10 2.6 5.5 3 V uA uA V OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 10.5 m ohm 13.5 m ohm A S PF PF PF DYNAMIC CHARACTERISTICS Input Capacitance Output Ca...